Remy Quentin, Igarashi Junta, Iihama Satoshi, Malinowski Grégory, Hehn Michel, Gorchon Jon, Hohlfeld Julius, Fukami Shunsuke, Ohno Hideo, Mangin Stéphane
Université de Lorraine Institut Jean Lamour UMR CNRS Nancy 7198 France.
Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication Tohoku University 2-1-1 Katahira, Aoba Sendai 980-8577 Japan.
Adv Sci (Weinh). 2020 Oct 15;7(23):2001996. doi: 10.1002/advs.202001996. eCollection 2020 Dec.
New methods to induce magnetization switching in a thin ferromagnetic material using femtosecond laser pulses without the assistance of an applied external magnetic field have recently attracted a lot of interest. It has been shown that by optically triggering the reversal of the magnetization in a GdFeCo layer, the magnetization of a nearby ferromagnetic thin film can also be reversed via spin currents originating in the GdFeCo layer. Here, using a similar structure, it is shown that the magnetization reversal of the GdFeCo is not required in order to reverse the magnetization of the ferromagnetic thin film. This switching is attributed to the ultrafast spin current and can be generated by the GdFeCo demagnetization. A larger energy efficiency of the ferromagnetic layer single pulse switching is obtained for a GdFeCo with a larger Gd concentration. Those ultrafast and energy efficient switchings observed in such spintronic devices open a new path toward ultrafast and energy efficient magnetic memories.
最近,在没有外部磁场的情况下,利用飞秒激光脉冲在薄铁磁材料中诱导磁化翻转的新方法引起了广泛关注。研究表明,通过光触发GdFeCo层中的磁化反转,附近铁磁薄膜的磁化也可以通过源自GdFeCo层的自旋电流而反转。在此,利用类似的结构表明,为了反转铁磁薄膜的磁化,并不需要GdFeCo的磁化反转。这种翻转归因于超快自旋电流,并且可以由GdFeCo的退磁产生。对于具有较大Gd浓度的GdFeCo,铁磁层单脉冲翻转可获得更高的能量效率。在这种自旋电子器件中观察到的那些超快且高效节能的翻转,为超快且高效节能的磁存储器开辟了一条新途径。