Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China.
Nanotechnology. 2016 Jul 8;27(27):275601. doi: 10.1088/0957-4484/27/27/275601. Epub 2016 May 27.
We report the growth of InAs/GaSb core-shell heterostructure nanowires with smooth sidewalls on Si substrates using metal-organic chemical vapor deposition with no assistance from foreign catalysts. Sb adatoms were observed to strongly influence the morphology of the GaSb shell. In particular, Ga droplets form on the nanowire tips when a relatively low TMSb flow rate is used, whereas the droplets are missing and the radial growth of the GaSb is enhanced due to a reduction in the diffusion length of the Ga adatoms when the TMSb flow rate is increased. Moreover, transmission electron microscopy measurements revealed that the GaSb shell coherently grew on the InAs core. The results obtained here show that the InAs/GaSb core-shell nanowires grown using the Si platform have strong potential in the fabrication of future nanometer-scale devices and in the study of fundamental quantum physics.
我们使用金属有机化学气相沉积法在 Si 衬底上生长了具有光滑侧壁的 InAs/GaSb 核壳异质结构纳米线，无需使用外来催化剂。我们观察到 Sb adatoms 强烈影响 GaSb 壳的形态。具体来说，当使用相对较低的 TMSb 流速时，Ga 液滴会在纳米线尖端形成，而当 TMSb 流速增加时，由于 Ga adatoms 的扩散长度减小，液滴会消失，GaSb 的径向生长会增强。此外，透射电子显微镜测量表明，GaSb 壳层在 InAs 核上实现了相干生长。这里得到的结果表明，在 Si 平台上生长的 InAs/GaSb 核壳纳米线在制造未来的纳米尺度器件和研究基本量子物理方面具有很强的潜力。
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