Yan Zhao, Han Yu, Lau Kei May
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, People's Republic of China.
Nanotechnology. 2020 Aug 21;31(34):345707. doi: 10.1088/1361-6528/ab91f2. Epub 2020 May 11.
We report on multi-stacked InAs/GaSb nano-ridges directly grown on (001) patterned Si substrates by metal-organic chemical vapor deposition (MOCVD). Uniform GaSb and InAs nano-ridges were demonstrated with optimized growth parameters. By adjusting the switching sequences, we also obtained defect-free InAs/GaSb and GaSb/InAs interfaces. Based on these fine-tuned growth conditions, multi-stacked InAs/GaSb nano-ridges were developed and characterized. The nano-ridges showed uniform morphology from scanning electron microscopy (SEM), and no observable crystalline defects were detected at the hetero-interfaces by transmission electron microscopy (TEM). These InAs/GaSb nano-ridges show great potential for applications in nano-scale tunneling devices and long wavelength light emitters and detectors. The demonstrated growth techniques provide helpful insights for the growth process control of 6.1 Å family compound semiconductors directly on Si by MOCVD.
我们报道了通过金属有机化学气相沉积（MOCVD）直接生长在（001）图案化硅衬底上的多层InAs/GaSb纳米脊。通过优化生长参数，展示了均匀的GaSb和InAs纳米脊。通过调整切换顺序，我们还获得了无缺陷的InAs/GaSb和GaSb/InAs界面。基于这些微调的生长条件，开发并表征了多层InAs/GaSb纳米脊。扫描电子显微镜（SEM）显示纳米脊具有均匀的形态，透射电子显微镜（TEM）在异质界面未检测到明显的晶体缺陷。这些InAs/GaSb纳米脊在纳米级隧道器件以及长波长发光器和探测器的应用中显示出巨大潜力。所展示的生长技术为通过MOCVD直接在硅上生长6.1 Å族化合物半导体的生长过程控制提供了有益的见解。
