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旋转石墨-石墨烯接触的电阻率。

Resistivity of Rotated Graphite-Graphene Contacts.

机构信息

Department of Electrical Engineering and ‡Department of Physics, Columbia University , New York, New York 10027, United States.

出版信息

Nano Lett. 2016 Jul 13;16(7):4477-82. doi: 10.1021/acs.nanolett.6b01657. Epub 2016 Jun 9.

Abstract

Robust electrical contact of bulk conductors to two-dimensional (2D) material, such as graphene, is critical to the use of these 2D materials in practical electronic devices. Typical metallic contacts to graphene, whether edge or areal, yield a resistivity of no better than 100 Ω μm but are typically >10 kΩ μm. In this Letter, we employ single-crystal graphite for the bulk contact to graphene instead of conventional metals. The graphite contacts exhibit a transfer length up to four-times longer than in conventional metallic contacts. Furthermore, we are able to drive the contact resistivity to as little as 6.6 Ω μm(2) by tuning the relative orientation of the graphite and graphene crystals. We find that the contact resistivity exhibits a 60° periodicity corresponding to crystal symmetry with additional sharp decreases around 22° and 39°, which are among the commensurate angles of twisted bilayer graphene.

摘要

大块导体与二维(2D)材料(如石墨烯)的牢固电接触对于这些 2D 材料在实际电子设备中的应用至关重要。典型的石墨烯金属接触,无论是边缘还是平面接触,其电阻率都不超过 100 Ω μm,但通常>10 kΩ μm。在这封信件中,我们使用单晶石墨作为石墨烯的块状接触,而不是传统金属。石墨接触的传输长度比传统金属接触长四倍。此外,我们能够通过调整石墨和石墨烯晶体的相对取向,将接触电阻率降低到低至 6.6 Ω μm(2)。我们发现接触电阻率表现出 60°的周期性,对应于晶体对称性,并且在 22°和 39°附近有额外的急剧下降,这两个角度是扭曲双层石墨烯的共位角之一。

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