利用 LuFeO3 薄膜中的六方-正交同型相变共存实现室温多铁性。
Implementing Room-Temperature Multiferroism by Exploiting Hexagonal-Orthorhombic Morphotropic Phase Coexistence in LuFeO3 Thin Films.
机构信息
Department of Materials Science and Engineering, and Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea.
National Institute for Nanomaterials Technology (NINT), Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea.
出版信息
Adv Mater. 2016 Sep;28(34):7430-5. doi: 10.1002/adma.201601989. Epub 2016 Jun 16.
Room-temperature multiferroism in LuFeO3 (LFO) films is demonstrated by exploiting the orthorhombic-hexagonal (o-h) morphotrophic phase coexistence. The LFO film further reveals a magnetoelectric coupling effect that is not shown in single-phase (h- or o-) LFO. The observed multiferroism is attributed to the combination of sufficient polarization from h-LFO and net magnetization from o-LFO.
LuFeO3（LFO）薄膜中展示出的室温多铁性是通过利用正交六方（o-h）形态协同共存来实现的。LFO 薄膜进一步显示出了单相反铁电体（h-或 o-）中未表现出的磁电耦合效应。所观察到的多铁性归因于 h-LFO 产生的足够极化和 o-LFO 产生的净磁化的结合。
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