Kong Qingrong, Qin Ruixuan, Li Dong, Zhao Haixia, Ren Yanping, Long Lasheng, Zheng Lansun
Collaborative Innovation Center of Chemistry for Energy Materials, State Key Laboratory of Physical Chemistry of Solid Surfaces, Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University Xiamen 361005 China
RSC Adv. 2019 Dec 17;9(71):41832-41836. doi: 10.1039/c9ra09224b. eCollection 2019 Dec 13.
Thin films of [(Fe Cr )][Cr(CN)]·HO ( ≈ 0.30-0.35, ≈ 1.77) (1) on FTO substrates (namely film 1) were synthesized with an electrochemical method. Investigation of the ferroelectricity of film 1 at different temperatures reveals that it exhibits ferroelectric behaviour in the temperature range from 10 K to 310 K. Study of the X-ray absorption (XAS) of the crushed film 1 and simulation of the structure of film 1 and crushed film 1 by using the Materials Studio software indicate that the vacancy defects and interactions between the film and FTO substrate make a key contribution to the ferroelectricity of film 1. Owing to the magnetic phase transition point being up to 210 K, film 1 is a multiferroic material and its magneto/electric coexistence temperature can be as high as 210 K.
采用电化学方法在FTO衬底上合成了[(Fe Cr )][Cr(CN)]·HO（≈0.30 - 0.35，≈1.77）(1)的薄膜（即薄膜1）。对薄膜1在不同温度下的铁电性研究表明，它在10 K至310 K的温度范围内表现出铁电行为。对粉碎后的薄膜1进行X射线吸收（XAS）研究，并使用Materials Studio软件对薄膜1和粉碎后的薄膜1的结构进行模拟，结果表明空位缺陷以及薄膜与FTO衬底之间的相互作用对薄膜1的铁电性起着关键作用。由于磁相变点高达210 K，薄膜1是一种多铁性材料，其磁/电共存温度可高达210 K。
