School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
Nanoscale. 2016 Jul 14;8(26):12883-6. doi: 10.1039/c6nr03965k. Epub 2016 Jun 17.
Carbon nanotubes and graphene are two most widely investigated low-dimensional materials for photonic and optoelectronic devices. Combining these two materials into all-carbon hybrid nanostructures has shown enhanced properties in a range of devices, such as photodetectors and flexible electrodes. Interfacial charge transfer is the most fundamental physical process that directly impacts device design and performance, but remains a subject less well studied. Here, we complemented Raman spectroscopy with photocurrent probing, a robust way of illustrating the interfacial built-in fields, and unambiguously revealed both static and dynamic (photo-induced) charge transfer processes at the nanotube-graphene interfaces. Significantly, the effects of nanotube species, i.e. metallic as opposed to semiconducting, are for the first time compared. Of all the devices examined, the graphene sheet was found to be p-type doped with (6, 5) chirality-enriched semiconducting SWNTs (s-SWNTs), while n-type doped with highly pure (>99%) metallic SWNTs (m-SWNTs). Our results provide important design guidelines for all-carbon hybrid based devices.
碳纳米管和石墨烯是两种最广泛研究的低维材料,用于光子学和光电设备。将这两种材料结合成全碳混合纳米结构,在一系列设备中显示出了增强的性能,例如光探测器和柔性电极。界面电荷转移是直接影响器件设计和性能的最基本物理过程,但仍然是一个研究较少的课题。在这里,我们用光电电流探测法补充了拉曼光谱学,这是一种有力的方法,可以说明界面内置场,并明确揭示了碳纳米管-石墨烯界面处的静态和动态(光致)电荷转移过程。重要的是,首次比较了碳纳米管的种类,即金属相对于半导体的影响。在所研究的所有器件中,发现石墨烯片被(6,5)手性富半导体 SWNTs(s-SWNTs)掺杂为 p 型,而被高度纯净(>99%)的金属 SWNTs(m-SWNTs)掺杂为 n 型。我们的结果为基于全碳混合的器件提供了重要的设计指导。