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轻氟化石墨烯作为 n 型 Si(111) 光阴极在水相电解液中的保护层。

Lightly Fluorinated Graphene as a Protective Layer for n-Type Si(111) Photoanodes in Aqueous Electrolytes.

机构信息

Division of Chemistry and Chemical Engineering, California Institute of Technology , Pasadena, California 91125, United States.

Department of Mechanical Engineering, Columbia University , New York, New York 10027, United States.

出版信息

Nano Lett. 2016 Jul 13;16(7):4082-6. doi: 10.1021/acs.nanolett.6b00773. Epub 2016 Jun 20.

DOI:10.1021/acs.nanolett.6b00773
PMID:27322181
Abstract

The behavior of n-Si(111) photoanodes covered by monolayer sheets of fluorinated graphene (F-Gr) was investigated under a range of chemical and electrochemical conditions. The electrochemical behavior of n-Si/F-Gr and np(+)-Si/F-Gr photoanodes was compared to hydride-terminated n-Si (n-Si-H) and np(+)-Si-H electrodes in contact with aqueous Fe(CN)6(3-/4-) and Br2/HBr electrolytes as well as in contact with a series of outer-sphere, one-electron redox couples in nonaqueous electrolytes. Illuminated n-Si/F-Gr and np(+)-Si/F-Gr electrodes in contact with an aqueous K3(Fe(CN)6/K4(Fe(CN)6 solutions exhibited stable short-circuit photocurrent densities of ∼10 mA cm(-2) for 100,000 s (>24 h), in comparison to bare Si electrodes, which yielded nearly a complete photocurrent decay over ∼100 s. X-ray photoelectron spectra collected before and after exposure to aqueous anodic conditions showed that oxide formation at the Si surface was significantly inhibited for Si electrodes coated with F-Gr relative to bare Si electrodes exposed to the same conditions. The variation of the open-circuit potential for n-Si/F-Gr in contact with a series of nonaqueous electrolytes of varying reduction potential indicated that the n-Si/F-Gr did not form a buried junction with respect to the solution contact. Further, illuminated n-Si/F-Gr electrodes in contact with Br2/HBr(aq) were significantly more electrochemically stable than n-Si-H electrodes, and n-Si/F-Gr electrodes coupled to a Pt catalyst exhibited ideal regenerative cell efficiencies of up to 5% for the oxidation of Br(-) to Br2.

摘要

研究了在一系列化学和电化学条件下,覆盖单层氟化石墨烯 (F-Gr) 的 n-Si(111) 光阳极的行为。比较了 n-Si/F-Gr 和 np(+)-Si/F-Gr 光阳极与氢化 n-Si (n-Si-H) 和 np(+)-Si-H 电极在与水相 Fe(CN)6(3-/4-)和 Br2/HBr 电解质以及与一系列非水相电解质中的外球单电子氧化还原偶联体接触时的电化学行为。与水相 K3(Fe(CN)6/K4(Fe(CN)6 溶液接触的光照 n-Si/F-Gr 和 np(+)-Si/F-Gr 电极在 100,000 s(>24 h)时表现出稳定的短路光电流密度约为 10 mA cm(-2),而裸 Si 电极的光电流衰减约为 100 s。暴露于水相阳极条件前后采集的 X 射线光电子能谱表明,与暴露于相同条件的裸 Si 电极相比,涂覆 F-Gr 的 Si 电极表面的氧化物形成得到了显著抑制。n-Si/F-Gr 与一系列具有不同还原电势的非水相电解质接触时的开路电位变化表明,相对于与溶液接触的 n-Si/F-Gr 未形成埋入结。此外,与 Br2/HBr(aq)接触的光照 n-Si/F-Gr 电极比 n-Si-H 电极具有更高的电化学稳定性,并且与 Pt 催化剂耦合的 n-Si/F-Gr 电极在 Br(-)氧化为 Br2 时表现出高达 5%的理想再生电池效率。

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