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一种集成信号调理电路的高温压阻式压力传感器。

A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit.

作者信息

Yao Zong, Liang Ting, Jia Pinggang, Hong Yingping, Qi Lei, Lei Cheng, Zhang Bin, Xiong Jijun

机构信息

National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan 030051, China.

Key Laboratory for Instrumentation Science & Dynamic Measurement, North University of China, Ministry of Education, Taiyuan 030051, China.

出版信息

Sensors (Basel). 2016 Jun 18;16(6):913. doi: 10.3390/s16060913.

DOI:10.3390/s16060913
PMID:27322288
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4934339/
Abstract

This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI) material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of -50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts), the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor's output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments.

摘要

本文重点介绍了一种带有集成信号调理电路的高温压阻式压力传感器的设计与制造，该传感器由一个封装的压敏芯片、一个温度补偿电路和一个信号调理电路组成。压敏芯片制造采用绝缘硅（SOI）材料和标准微机电系统工艺，温度补偿和信号调理电路采用高温电子元件。整个压力传感器实现了气密密封，可在-50°C至220°C范围内长期工作。与传统压力传感器的输出电压范围（几十到几百毫伏）不同，该传感器的输出电压为0V至5V，基于实验验证，这在长期传输的实际应用中可显著提高信噪比和测量精度。此外，由于这种柔性传感器的输出电压可调，无需使用一般用于电压转换器的后续压力变送器装置，这大大降低了测试系统的成本。因此，所提出的带有集成信号调理电路的高温压阻式压力传感器有望在恶劣环境下的压力测量中得到高度应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/c166f0885d22/sensors-16-00913-g015.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/a19757e95c0d/sensors-16-00913-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/aa2a27300a4a/sensors-16-00913-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/0702ef41a460/sensors-16-00913-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/c15529afa552/sensors-16-00913-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/b59784640859/sensors-16-00913-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/d8b09057766b/sensors-16-00913-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/7cc8f408ba7c/sensors-16-00913-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/af5379bf1917/sensors-16-00913-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/28676d254805/sensors-16-00913-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/7a2aade9bb7a/sensors-16-00913-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/a00f9a438ade/sensors-16-00913-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/cf202117bfe5/sensors-16-00913-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/f8f93f8aacc5/sensors-16-00913-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/3ac25bee742a/sensors-16-00913-g014.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/c166f0885d22/sensors-16-00913-g015.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/a19757e95c0d/sensors-16-00913-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/aa2a27300a4a/sensors-16-00913-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/0702ef41a460/sensors-16-00913-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/c15529afa552/sensors-16-00913-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/b59784640859/sensors-16-00913-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/d8b09057766b/sensors-16-00913-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/7cc8f408ba7c/sensors-16-00913-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/af5379bf1917/sensors-16-00913-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/28676d254805/sensors-16-00913-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/7a2aade9bb7a/sensors-16-00913-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/a00f9a438ade/sensors-16-00913-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/cf202117bfe5/sensors-16-00913-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/f8f93f8aacc5/sensors-16-00913-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/3ac25bee742a/sensors-16-00913-g014.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b566/4934339/c166f0885d22/sensors-16-00913-g015.jpg

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