Department of Electrical Engineering, University of Southern California , Los Angeles, California 90089, United States.
Department of Materials Science and Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, United States.
ACS Nano. 2016 Jul 26;10(7):6782-90. doi: 10.1021/acsnano.6b02395. Epub 2016 Jun 21.
In this paper, we report record radio frequency (RF) performance of carbon nanotube transistors based on combined use of a self-aligned T-shape gate structure, and well-aligned, high-semiconducting-purity, high-density polyfluorene-sorted semiconducting carbon nanotubes, which were deposited using dose-controlled, floating evaporative self-assembly method. These transistors show outstanding direct current (DC) performance with on-current density of 350 μA/μm, transconductance as high as 310 μS/μm, and superior current saturation with normalized output resistance greater than 100 kΩ·μm. These transistors create a record as carbon nanotube RF transistors that demonstrate both the current-gain cutoff frequency (ft) and the maximum oscillation frequency (fmax) greater than 70 GHz. Furthermore, these transistors exhibit good linearity performance with 1 dB gain compression point (P1dB) of 14 dBm and input third-order intercept point (IIP3) of 22 dBm. Our study advances state-of-the-art of carbon nanotube RF electronics, which have the potential to be made flexible and may find broad applications for signal amplification, wireless communication, and wearable/flexible electronics.
本文报道了基于自对准 T 形栅极结构和经剂量控制的、浮动蒸发自组装方法沉积的高度取向、高半导体纯度、高密度聚芴有序半导体碳纳米管的碳纳米管晶体管在射频方面的创纪录性能。这些晶体管具有出色的直流（DC）性能，其导通电流密度为 350 μA/μm，跨导高达 310 μS/μm，具有出色的电流饱和特性，归一化输出电阻大于 100 kΩ·μm。这些晶体管创造了碳纳米管射频晶体管的记录，其电流增益截止频率（ft）和最大振荡频率（fmax）均大于 70 GHz。此外，这些晶体管具有良好的线性性能，其 1 dB 增益压缩点（P1dB）为 14 dBm，输入三阶截点（IIP3）为 22 dBm。我们的研究推进了碳纳米管射频电子学的发展，这种电子学具有柔性的潜力，可能会在信号放大、无线通信和可穿戴/柔性电子领域得到广泛应用。
