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基于金属氧化物的透明电极中的寄生吸收减少:在钙钛矿太阳能电池中的应用。

Parasitic Absorption Reduction in Metal Oxide-Based Transparent Electrodes: Application in Perovskite Solar Cells.

机构信息

Photovoltaics and Thin-Film Electronics Laboratory, Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne (EPFL) , Rue de la Maladière 71b, 2002 Neuchâtel, Switzerland.

CSEM, PV-Center, Jaquet-Droz 1, 2002 Neuchâtel, Switzerland.

出版信息

ACS Appl Mater Interfaces. 2016 Jul 13;8(27):17260-7. doi: 10.1021/acsami.6b04425. Epub 2016 Jun 30.

Abstract

Transition metal oxides (TMOs) are commonly used in a wide spectrum of device applications, thanks to their interesting electronic, photochromic, and electrochromic properties. Their environmental sensitivity, exploited for gas and chemical sensors, is however undesirable for application in optoelectronic devices, where TMOs are used as charge injection or extraction layers. In this work, we first study the coloration of molybdenum and tungsten oxide layers, induced by thermal annealing, Ar plasma exposure, or transparent conducting oxide overlayer deposition, typically used in solar cell fabrication. We then propose a discoloration method based on an oxidizing CO2 plasma treatment, which allows for a complete bleaching of colored TMO films and prevents any subsequent recoloration during following cell processing steps. Then, we show that tungsten oxide is intrinsically more resilient to damage induced by Ar plasma exposure as compared to the commonly used molybdenum oxide. Finally, we show that parasitic absorption in TMO-based transparent electrodes, as used for semitransparent perovskite solar cells, silicon heterojunction solar cells, or perovskite/silicon tandem solar cells, can be drastically reduced by replacing molybdenum oxide with tungsten oxide and by applying a CO2 plasma pretreatment prior to the transparent conductive oxide overlayer deposition.

摘要

过渡金属氧化物 (TMO) 由于其有趣的电子、光致变色和电致变色特性,被广泛应用于各种设备中。然而,TMO 用于光电设备中的电荷注入或提取层时,其对环境的敏感性(用于气体和化学传感器)是不理想的。在这项工作中,我们首先研究了热退火、Ar 等离子体暴露或透明导电氧化物覆盖层沉积(通常用于太阳能电池制造)引起的钼和氧化钨层的着色。然后,我们提出了一种基于氧化 CO2 等离子体处理的退色方法,该方法可完全漂白有色 TMO 薄膜,并防止在后续电池处理步骤中再次着色。然后,我们表明与常用的氧化钼相比,氧化钨本质上更能抵抗 Ar 等离子体暴露引起的损伤。最后,我们表明,用氧化钨代替氧化钼,并在透明导电氧化物覆盖层沉积之前进行 CO2 等离子体预处理,可以大大降低用于半透明钙钛矿太阳能电池、硅异质结太阳能电池或钙钛矿/硅串联太阳能电池的 TMO 基透明电极中的寄生吸收。

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