Manwar Rayyan, Chowdhury Sazzadur
Department of Electrical and Computer Engineering, University of Windsor, 401 Sunset Avenue, Windsor, ON N9B 3P4, Canada.
Sensors (Basel). 2016 Jun 24;16(7):959. doi: 10.3390/s16070959.
Experimental measurement results of a 1.75 mm × 1.75 mm footprint area Capacitive Micromachined Ultrasonic Transducer (CMUT) planar array fabricated using a bisbenzocyclobutene (BCB)-based adhesive wafer bonding technique has been presented. The array consists of 40 × 40 square diaphragm CMUT cells with a cavity thickness of 900 nm and supported by 10 µm wide dielectric spacers patterned on a thin layer of BCB. A 150 µm wide one µm thick gold strip has been used as the contact pad for gold wire bonding. The measured resonant frequency of 19.3 MHz using a Polytec™ laser Doppler vibrometer (Polytec™ MSA-500) is in excellent agreement with the 3-D FEA simulation result using IntelliSuite™. An Agilent ENA5061B vector network analyzer (VNA) has been used for impedance measurement and the resonance and anti-resonance values from the imaginary impedance curve were used to determine the electromechanical coupling co-efficient. The measured coupling coefficient of 0.294 at 20 V DC bias exhibits 40% higher transduction efficiency as compared to a measured value published elsewhere for a silicon nitride based CMUT. A white light interferometry method was used to measure the diaphragm deflection profiles at different DC bias. The diaphragm center velocity was measured for different sub-resonant frequencies using a Polytec™ laser Doppler vibrometer that confirms vibration of the diaphragm at different excitation frequencies and bias voltages. Transmit and receive operations of CMUT cells were characterized using a pitch-catch method and a -6 dB fractional bandwidth of 23% was extracted from the received signal in frequency domain. From the measurement, it appears that BCB-based CMUTs offer superior transduction efficiency as compared to silicon nitride or silicon dioxide insulator-based CMUTs, and provide a very uniform deflection profile thus making them a suitable candidate to fabricate highly energy efficient CMUTs.
本文介绍了采用基于双苯并环丁烯(BCB)的粘合剂晶圆键合技术制造的1.75 mm×1.75 mm占地面积的电容式微机械超声换能器(CMUT)平面阵列的实验测量结果。该阵列由40×40的方形膜片CMUT单元组成,腔厚度为900 nm,并由在BCB薄层上图案化的10 µm宽的介电间隔物支撑。一条150 µm宽、1 µm厚的金带被用作金线键合的接触垫。使用Polytec™激光多普勒振动计(Polytec™ MSA - 500)测得的19.3 MHz谐振频率与使用IntelliSuite™的三维有限元分析(FEA)模拟结果非常吻合。使用安捷伦ENA5061B矢量网络分析仪(VNA)进行阻抗测量,并利用虚部阻抗曲线的谐振和反谐振值来确定机电耦合系数。在20 V直流偏置下测得的耦合系数为0.294,与其他地方发表的基于氮化硅的CMUT的测量值相比,其转换效率高40%。采用白光干涉测量法测量不同直流偏置下的膜片偏转轮廓。使用Polytec™激光多普勒振动计测量了不同亚谐振频率下的膜片中心速度,证实了膜片在不同激励频率和偏置电压下的振动。采用间距捕获法对CMUT单元的发射和接收操作进行了表征,并从频域中的接收信号中提取了23%的 - 6 dB分数带宽。从测量结果来看,与基于氮化硅或二氧化硅绝缘体的CMUT相比,基于BCB的CMUT具有更高的转换效率,并提供非常均匀的偏转轮廓,因此使其成为制造高能效CMUT的合适候选者。