De Groote Andreas, Cardile Paolo, Subramanian Ananth Z, Fecioru Alin M, Bower Christopher, Delbeke Danae, Baets Roel, Roelkens Günther
Opt Express. 2016 Jun 27;24(13):13754-62. doi: 10.1364/OE.24.013754.
We present the first III-V opto-electronic components transfer printed on and coupled to a silicon photonic integrated circuit. Thin InP-based membranes are transferred to an SOI waveguide circuit, after which a single-spatial-mode broadband light source is fabricated. The process flow to create transfer print-ready coupons is discussed. Aqueous FeCl at 5°C was found to be the best release agent in combination with the photoresist anchoring structures that were used. A thin DVS-BCB layer provides a strong bond, accommodating the post-processing of the membranes. The resulting optically pumped LED has a 3 dB bandwidth of 130 nm, comparable to devices realized using a traditional die-to-wafer bonding method.
我们展示了首个转移印刷并耦合到硅光子集成电路上的III-V族光电器件。基于InP的薄膜被转移到一个SOI波导电路上,之后制造出了单空间模式宽带光源。讨论了创建可用于转移印刷的试样的工艺流程。发现5°C的FeCl水溶液与所使用的光刻胶锚固结构相结合是最佳脱模剂。一层薄的DVS-BCB层提供了牢固的键合,适应了薄膜的后处理。所得到的光泵浦发光二极管的3 dB带宽为130 nm,与使用传统管芯到晶圆键合方法实现的器件相当。