Institute of Thin Film Physics and Applications, College of Physics and Energy, Shenzhen University, 518060, China.
Sci Rep. 2016 Jul 18;6:29910. doi: 10.1038/srep29910.
In this work, an alternative route to fabricating high-quality CH3NH3PbI3 thin films is proposed. Single-source physical vapour deposition (SSPVD) without a post-heat-treating process was used to prepare CH3NH3PbI3 thin films at room temperature. This new process enabled complete surface coverage and moisture stability in a non-vacuum solution. Moreover, the challenges of simultaneously controlling evaporation processes of the organic and inorganic sources via dual-source vapour evaporation and the heating process required to obtain high crystallization were avoided. Excellent composition with stoichiometry transferred from the powder material, a high level of tetragonal phase-purity, full surface coverage, well-defined grain structure, high crystallization and reproducibility were obtained. A PCE of approximately 10.90% was obtained with a device based on SSPVD CH3NH3PbI3. These initial results suggest that SSPVD is a promising method to significantly optimize perovskite CH3NH3PbI3 solar cell efficiency.
本工作提出了一种制备高质量 CH3NH3PbI3 薄膜的替代途径。采用单源物理气相沉积(SSPVD)而无需后热处理过程,可在室温下制备 CH3NH3PbI3 薄膜。该新工艺可在非真空溶液中实现完全的表面覆盖和水分稳定性。此外,避免了通过双源蒸汽蒸发和获得高结晶度所需的加热过程来同时控制有机和无机源的蒸发过程的挑战。从粉末材料中获得了具有良好化学计量比的优秀成分、高四方相纯度、完全的表面覆盖、定义明确的晶粒结构、高结晶度和重现性。基于 SSPVD CH3NH3PbI3 的器件获得了约 10.90%的 PCE。这些初步结果表明,SSPVD 是显著优化钙钛矿 CH3NH3PbI3 太阳能电池效率的一种很有前途的方法。