Department of Electronics and Computer Engineering , Hanyang University , Seoul 04763 , Republic of Korea.
Department of Molecular Science & Technology , Ajou University , Suwon 443-749 , Republic of Korea.
ACS Appl Mater Interfaces. 2018 May 2;10(17):14843-14849. doi: 10.1021/acsami.7b18817. Epub 2018 Apr 20.
The effects of the ZnS shell layer on the memory performances of flexible memristive devices based on quantum dots (QDs) with an InP/ZnSe/ZnS core-multishell structure embedded in a poly(methylmethacrylate) layer were investigated. The on/off ratios of the devices based on QDs with an InP/ZnSe core-shell structure and with an InP/ZnSe/ZnS core-multishell structure were approximately 4.2 × 10 and 8.5 × 10, respectively, indicative of enhanced charge storage capability in the latter. After bending, the memory characteristics of the memristive devices based on QDs with the InP/ZnSe/ZnS structure were similar to those before bending. In addition, those devices maintained the same on/off ratios for retention time of 1 × 10 s, and the number of endurance cycles was above 1 × 10. The reset voltages ranged from -2.3 to -3.1 V, and the set voltages ranged from 1.3 to 2.1 V, indicative of reliable electrical characteristics. Furthermore, the possible operating mechanisms of the devices are presented on the basis of the electron trapping and release mode.
研究了嵌入聚甲基丙烯酸甲酯层中的具有 InP/ZnSe/ZnS 核壳结构的量子点（QD）的柔性忆阻器器件的 ZnS 壳层对其存储性能的影响。基于具有 InP/ZnSe 核壳结构和具有 InP/ZnSe/ZnS 核壳结构的 QD 的器件的开/关比分别约为 4.2×10 和 8.5×10，表明后者具有增强的电荷存储能力。在弯曲之后，基于具有 InP/ZnSe/ZnS 结构的 QD 的忆阻器器件的存储特性与弯曲之前相似。此外，这些器件在 1×10 s 的保留时间内保持相同的开/关比，并且循环寿命超过 1×10。复位电压范围为-2.3 至-3.1 V，置位电压范围为 1.3 至 2.1 V，表明具有可靠的电特性。此外，根据电子俘获和释放模式提出了器件的可能工作机制。
