Kim Seon Tae, Kim Tae Gyu, Cho Hyun, Yoon Su Jong, Kim Hye Sung, Kim Jin Kon
J Nanosci Nanotechnol. 2016 Feb;16(2):1852-4. doi: 10.1166/jnn.2016.11995.
Indium tin oxide (ITO) films with various thicknesses from 104 nm to 513 nm were prepared onto polyethylene terephthalate (PET) substrates by using r.f. magnetron sputtering without intentionally heating the substrates. The structural, optical, and electrical properties of ITO films were investigated as a function of film thickness. It was found that the amorphous nature of the ITO film was dominant below the thickness of about 200 nm but the degree of the crystallinity increased with an increasing thickness above the thickness of about 250 nm, resulting in the increase of carrier concentration and therefore reducing the electrical resistivity from 5.1 x 10(-3) to 9.4 x 10(-4) omega x cm. The average transmittance (400-800 nm) of the ITO deposited PET substrates decreased as the film thickness was increasing and was above 80% for the thickness below 315 nm. The results show that the improvement of the film crystallinity with the film thickness contributes to the increase of the carrier concentration and the enhancement of the electrical conductivity.
通过射频磁控溅射在聚对苯二甲酸乙二酯（PET）衬底上制备了厚度从104纳米到513纳米不等的氧化铟锡（ITO）薄膜，且未对衬底进行有意加热。研究了ITO薄膜的结构、光学和电学性质随薄膜厚度的变化情况。结果发现，在厚度约200纳米以下时，ITO薄膜的非晶性质占主导，但在厚度约250纳米以上时，结晶度随着厚度增加而提高，导致载流子浓度增加，从而使电阻率从5.1×10⁻³降低到9.4×10⁻⁴Ω·cm。随着薄膜厚度增加，沉积在PET衬底上的ITO薄膜的平均透过率（400 - 800纳米）降低，对于厚度低于315纳米的薄膜，平均透过率高于80%。结果表明，薄膜结晶度随薄膜厚度的提高有助于载流子浓度的增加和电导率的增强。
