Dong Ling, Zhu Guisheng, Xu Huarui, Jiang Xupeng, Zhang Xiuyun, Zhao Yunyun, Yan Dongliang, Yuan Le, Yu Aibing
Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Science and Technology, Guilin 541004, China.
School of Materials Science and Engineering, Xihua University, Chengdu 610039, China.
Materials (Basel). 2019 Mar 22;12(6):958. doi: 10.3390/ma12060958.
Nanopillar crystalline indium tin oxide (ITO) thin films were deposited on soda-lime glass substrates by radio frequency (RF) magnetron sputtering under the power levels of 100 W, 150 W, 200 W and 250 W. The preparation process of thin films is divided into two steps, firstly, sputtering a very thin and granular crystalline film at the bottom, and then sputtering a nanopillar crystalline film above the bottom film. The structure, morphology, optical and electrical properties of the nanopillar crystalline ITO thin films were investigated. From X-ray diffraction (XRD) analysis, the nanopillar crystalline thin films shows (400) preferred orientation. Due to the effect of the bottom granular grains, the crystallinity of the nanopillar crystals on the upper layer was greatly improved. The nanopillar crystalline ITO thin films exhibited excellent electrical properties, enhanced visible light transmittance and a highly infrared reflectivity in the mid-infrared region. It is noted that the thin film deposited at 200 W showed the best combination of optical and electrical performance, with resistivity of 1.44 × 10 Ω cm, average transmittance of 88.49% (with a film thickness of 1031 nm) and IR reflectivity reaching 89.18%.
通过射频（RF）磁控溅射，在100瓦、150瓦、200瓦和250瓦的功率水平下，将纳米柱晶态铟锡氧化物（ITO）薄膜沉积在钠钙玻璃基板上。薄膜的制备过程分为两步，首先，在底部溅射一层非常薄的颗粒状晶态薄膜，然后在底部薄膜上方溅射一层纳米柱晶态薄膜。对纳米柱晶态ITO薄膜的结构、形貌、光学和电学性能进行了研究。通过X射线衍射（XRD）分析，纳米柱晶态薄膜呈现出（400）择优取向。由于底部颗粒晶粒的作用，上层纳米柱晶体的结晶度得到了极大提高。纳米柱晶态ITO薄膜表现出优异的电学性能、增强的可见光透射率以及在中红外区域的高红外反射率。值得注意的是，在200瓦功率下沉积的薄膜表现出最佳的光学和电学性能组合，电阻率为1.44×10Ω·cm，平均透射率为88.49%（薄膜厚度为1031纳米），红外反射率达到89.18%。
