Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, South Korea.
Defense Advanced R&D Center, Agency for Defense Development, Daejeon, 34186, South Korea.
Nanoscale Res Lett. 2016 Dec;11(1):341. doi: 10.1186/s11671-016-1504-8. Epub 2016 Jul 22.
In this study, HIV-1 Rev response element (RRE) RNA was detected via an Au-coated vertical silicon nanowire electrode array (VSNEA). The VSNEA was fabricated by combining bottom-up and top-down approaches and then immobilized by artificial peptides for the recognition of HIV-1 RRE. Differential pulse voltammetry (DPV) analysis was used to measure the electrochemical response of the peptide-immobilized VSNEA to the concentration and types of HIV-1 RRE RNA. DPV peaks showed linearity to the concentration of RNA with a detection limit down to 1.513 fM. It also showed the clear different peaks to the mutated HIV-1 RRE RNA. The high sensitivity and selectivity of VSNEA for the detection of HIV-1 RRE RNA may be attributed to the high surface-to-volume ratio and total overlap diffusion mode of ions of the one-dimensional nanowire electrodes.
在这项研究中，通过金涂层垂直硅纳米线电极阵列（VSNEA）检测 HIV-1 Rev 反应元件（RRE）RNA。VSNEA 通过自下而上和自上而下的方法结合制造，然后通过人工肽固定以识别 HIV-1 RRE。差分脉冲伏安法（DPV）分析用于测量肽固定的 VSNEA 对 HIV-1 RRE RNA 的浓度和类型的电化学响应。DPV 峰对 RNA 的浓度表现出线性关系，检测限低至 1.513 fM。它还显示出与突变的 HIV-1 RRE RNA 的明显不同的峰。VSNEA 对 HIV-1 RRE RNA 的高灵敏度和选择性可能归因于一维纳米线电极的高表面积与体积比和总重叠扩散模式的离子。
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