Hashimoto Kazumasa, Sasaki Fumio, Hotta Shu, Yanagi Hisao
J Nanosci Nanotechnol. 2016 Apr;16(4):3200-5. doi: 10.1166/jnn.2016.12285.
One-dimensional (1D) structures of 2,5-bis(4-biphenylyl)thiophene (BP1T) crystals are fabricated for light amplification and field-effect transistor (FET) measurements. A strip-shaped 1D structure (10 µm width) made by photolitography of a vapor-deposited polycrystalline film shows amplified spontaneous emission and lasing oscillations under optical pumping. An FET fabricated with this 1D structure exhibits hole-conduction with a mobility of µh = 8.0 x 10(-3) cm2/Vs. Another 1 D-structured FET is fabricated with epitaxially grown needle-like crystals of BP1T. This needle-crystal FET exhibits higher mobility of µh = 0.34 cm2/Vs. This improved hole mobility is attributed to the single-crystal channel of epitaxial needles while the grain boudaries in the polycrystalline 1 D-structure decrease the carrier transport.
制备了2,5-双(4-联苯基)噻吩(BP1T)晶体的一维(1D)结构，用于光放大和场效应晶体管(FET)测量。通过对气相沉积多晶膜进行光刻制成的条形一维结构(宽度为10 µm)在光泵浦下显示出放大的自发发射和激光振荡。用这种一维结构制造的FET表现出空穴传导，迁移率为µh = 8.0×10(-3) cm2/Vs。另一个一维结构的FET是用BP1T的外延生长针状晶体制备的。这种针状晶体FET表现出更高的迁移率µh = 0.34 cm2/Vs。这种空穴迁移率的提高归因于外延针的单晶通道，而多晶一维结构中的晶界降低了载流子传输。
