Department Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.
University of Chinese Academy of Sciences, Beijing, 100049, China.
Angew Chem Int Ed Engl. 2016 Aug 26;55(36):10672-5. doi: 10.1002/anie.201604478. Epub 2016 Aug 5.
Development of chemically doped high performance n-type organic thermoelectric (TE) materials is of vital importance for flexible power generating applications. For the first time, bismuth (Bi) n-type chemical doping of organic semiconductors is described, enabling high performance TE materials. The Bi interfacial doping of thiophene-diketopyrrolopyrrole-based quinoidal (TDPPQ) molecules endows the film with a balanced electrical conductivity of 3.3 S cm(-1) and a Seebeck coefficient of 585 μV K(-1) . The newly developed TE material possesses a maximum power factor of 113 μW m(-1) K(-2) , which is at the forefront for organic small molecule-based n-type TE materials. These studies reveal that fine-tuning of the heavy metal doping of organic semiconductors opens up a new strategy for exploring high performance organic TE materials.
开发高性能的化学掺杂 n 型有机热电 (TE) 材料对于柔性发电应用至关重要。本文首次描述了铋 (Bi) 对有机半导体的 n 型化学掺杂，从而实现了高性能的 TE 材料。噻吩二酮吡咯并吡咯基醌 (TDPPQ) 分子的 Bi 界面掺杂使薄膜具有平衡的电导率 3.3 S cm(-1) 和 Seebeck 系数 585 μV K(-1) 。新开发的 TE 材料具有最大功率因子 113 μW m(-1) K(-2) ，这是有机小分子 n 型 TE 材料的前沿水平。这些研究表明，精细调控有机半导体的重金属掺杂为探索高性能有机 TE 材料开辟了新策略。
