温度和激子浓度诱导的4,4'-双(4''-三苯基硅基)苯基-1,1'-联萘的激基复合物发射及其在类太阳光白色有机发光二极管中的应用

Temperature and Exciton Concentration Induced Excimer Emission of 4,4'-Bis(4''-Triphenylsilyl) Phenyl-1,1'-Binaphthalene and Application for Sunlight-Like White Organic Light-Emitting Diodes.

作者信息

Xu Tao, Li Weiling, Gao Xicun, Sun Chang, Chen Guo, Zhang Xiaowen, Li Chunya, Zhu Wenqing, Wei Bin

机构信息

Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai, 200072, People's Republic of China.

Sino-European School of Technology, Shanghai University, 99 Shangda Road, Shanghai, 200444, People's Republic of China.

出版信息

Nanoscale Res Lett. 2016 Dec;11(1):379. doi: 10.1186/s11671-016-1578-3. Epub 2016 Aug 25.

DOI:10.1186/s11671-016-1578-3

PMID:27562015

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4999381/

Abstract

This paper demonstrates the influence of temperature, exciton concentration, and electron transportation layers on the excimer emission of a novel deep-blue material: 4,4'-bis(4''-triphenylsilyl) phenyl-1,1'-binaphthalene (SiBN), by studying the photoluminescence and electroluminescence spectra of SiBN-based film. We have further developed sunlight-like and warm-light white organic light-emitting diodes (WOLEDs) with high efficiency and wide-range spectra, using SiBN and bis(2-phenylbenzothiozolato-N,C2')iridium(acetylacetonate) (bt2Ir(acac)) as the blue excimer and yellow materials, respectively. The resulting device exhibited an excellent spectra overlap ratio of 82.9 % with sunlight, while the device peak current efficiency, external quantum efficiency, and power efficiency were 18.5 cd/A, 6.34 %, and 11.68 lm/W, respectively, for sunlight-like WOLEDs.

摘要

本文通过研究基于4,4'-双(4''-三苯基硅基)苯基-1,1'-联萘(SiBN)的薄膜的光致发光和电致发光光谱，证明了温度、激子浓度和电子传输层对这种新型深蓝色材料SiBN的激基缔合物发射的影响。我们进一步开发了具有高效和宽光谱的类太阳光和暖光白色有机发光二极管(WOLED)，分别使用SiBN和双(2-苯基苯并噻唑-N,C2')铱(乙酰丙酮)(bt2Ir(acac))作为蓝色激基缔合物和黄色材料。对于类太阳光WOLED，所得器件与太阳光的光谱重叠率极佳，为82.9%，而器件的峰值电流效率、外量子效率和功率效率分别为18.5 cd/A、6.34%和11.68 lm/W。