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在独立的硅纳米线阵列中对声子和电子输运的表面化学调控。

Surface Chemical Tuning of Phonon and Electron Transport in Free-Standing Silicon Nanowire Arrays.

机构信息

Laboratory of Thermodynamics in Emerging Technologies, Department of Mechanical and Process Engineering, ETH Zürich , Sonneggstrasse 3, 8092 Zürich, Switzerland.

Laboratory for Solid State Physics, Department of Physics, ETH Zürich , Otto-Stern-Weg 1, 8093 Zürich, Switzerland.

出版信息

Nano Lett. 2016 Oct 12;16(10):6364-6370. doi: 10.1021/acs.nanolett.6b02754. Epub 2016 Sep 6.

Abstract

We report electronic and phononic transport measurements of monocrystalline batch-fabricated silicon nanowire (SiNW) arrays functionalized with different surface chemistries. We find that hydrogen-terminated SiNWs prepared by vapor HF etching of native-oxide-covered devices show increased electrical conductivity but decreased thermal conductivity. We used the kinetic Monte Carlo method to solve the Boltzmann transport equation and also numerically examine the effect of phonon boundary scattering. Surface transfer doping of the SiNWs by cobaltocene or decamethylcobaltocene drastically improves the electrical conductivity by 2 to 4 orders of magnitude without affecting the thermal conductivity. The results showcase surface chemical control of nanomaterials as a potent pathway that can complement device miniaturization efforts in the quest for more efficient thermoelectric materials and devices.

摘要

我们报告了通过不同表面化学处理的单晶批量制造的硅纳米线(SiNW)阵列的电子和声子输运测量结果。我们发现,通过对具有本征氧化物覆盖层的器件进行气相 HF 刻蚀制备的氢终止 SiNW 表现出更高的电导率,但热导率降低。我们使用动力学蒙特卡罗方法求解玻尔兹曼输运方程,并数值研究了声子边界散射的影响。通过二茂钴或十甲基二茂钴对 SiNW 的表面转移掺杂可将电导率提高 2 到 4 个数量级,而对热导率没有影响。这些结果展示了纳米材料的表面化学控制作为一种有效的途径,可以补充器件小型化的努力,以寻求更有效的热电材料和器件。

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