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化学浴法生长半导体薄膜表面演变动力学。

Dynamics of surface evolution in semiconductor thin films grown from a chemical bath.

机构信息

School of Physics and Material Sciences, Thapar University, Patiala-147004, India.

出版信息

Sci Rep. 2016 Sep 12;6:33136. doi: 10.1038/srep33136.

DOI:10.1038/srep33136
PMID:27615367
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5018873/
Abstract

Dynamics of surface evolution in CdS thin films grown by chemical bath deposition technique has been studied from time sequence of atomic force micrographs. Detailed scaling analysis of surface fluctuation in real and Fourier space yielded characteristic exponents αloc = 0.78 ± 0.07, α = 2.20 ± 0.08, αs = 1.49 ± 0.22, β = 0.86 ± 0.05 and βloc = 0.43 ± 0.10, which are very different from those predicted by the local growth models and are not related to any known universality classes. The observed anomalous scaling pattern, characterized by power law scaling dependence of interface width on deposition time differently at local and global scale, with rapid roughening of the growth front has been discussed to arise as a consequence of a nonlocal effect in the form of diffusional instability.

摘要

通过原子力显微镜的时间序列,研究了化学浴沉积技术生长的 CdS 薄膜表面演化的动力学。对实空间和傅立叶空间表面涨落的详细标度分析得到了特征指数αloc=0.78±0.07、α=2.20±0.08、αs=1.49±0.22、β=0.86±0.05 和βloc=0.43±0.10,这些指数与局部生长模型预测的指数非常不同,也与任何已知的普适类无关。观察到的异常标度模式,其特征是界面宽度随沉积时间的变化在局部和全局尺度上呈幂律依赖性,生长前沿的快速粗糙化,被认为是扩散不稳定性形式的非局部效应的结果。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf2e/5018873/0dfb96a2069b/srep33136-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf2e/5018873/62329a868270/srep33136-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf2e/5018873/9fa34f4a46d2/srep33136-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf2e/5018873/0dfb96a2069b/srep33136-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf2e/5018873/62329a868270/srep33136-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf2e/5018873/9fa34f4a46d2/srep33136-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf2e/5018873/0dfb96a2069b/srep33136-f4.jpg

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