Department of Electrical and Computer Engineering, Micro and Nanotechnology lab, University of Illinois , Urbana, Illinois 61801, United States.
Australian Nuclear Science and Technology Organisation , Locked Bag 2001, Kirrawee DC, New South Wales 2232, Australia.
ACS Appl Mater Interfaces. 2016 Oct 5;8(39):26244-26250. doi: 10.1021/acsami.6b08919. Epub 2016 Sep 27.
Intentional and unintentional doping in semiconductor nanowires undoubtedly have significant impact on the device performance. However, spatially resolved precise determination of dopant concentration is challenging due to insufficient sensitivity and resolution of conventional techniques. In this paper, quantitative 3D distribution of Si and Zn dopants in planar GaAs nanowires and their interface with AlGaAs film underneath are obtained by using a unique atom probe tomography technique, providing critical insights for the growth and potential applications of these nanowires.
有意和无意掺杂半导体纳米线无疑对器件性能有重大影响。然而，由于传统技术的灵敏度和分辨率不足，对掺杂浓度进行空间分辨的精确测定具有挑战性。在本文中，我们使用独特的原子探针层析技术定量获得了平面 GaAs 纳米线中 Si 和 Zn 掺杂剂的 3D 分布及其与下方 AlGaAs 薄膜的界面，为这些纳米线的生长和潜在应用提供了重要的见解。
