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Titanium trisulfide monolayer: theoretical prediction of a new direct-gap semiconductor with high and anisotropic carrier mobility.
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Extreme In-Plane Thermal Conductivity Anisotropy in Titanium Trisulfide Caused by Heat-Carrying Optical Phonons.
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Highly polarization sensitive photodetectors based on quasi-1D titanium trisulfide (TiS).
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Gate-Controlled Metal-Insulator Transition in TiS Nanowire Field-Effect Transistors.
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Anisotropic quasi-one-dimensional layered transition-metal trichalcogenides: synthesis, properties and applications.
RSC Adv. 2020 Oct 2;10(60):36413-36438. doi: 10.1039/d0ra07160a. eCollection 2020 Oct 1.
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Strongly Anisotropic Strain-Tunability of Excitons in Exfoliated ZrSe.
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Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials.
Research (Wash D C). 2020 Aug 29;2020:5464258. doi: 10.34133/2020/5464258. eCollection 2020.
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Abnormal band bowing effects in phase instability crossover region of GaSeTe nanomaterials.
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High Pressure Vibrational Properties of WS2 Nanotubes.
Nano Lett. 2016 Feb 10;16(2):993-9. doi: 10.1021/acs.nanolett.5b03996. Epub 2016 Jan 12.
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Recent Advances in Two-Dimensional Materials beyond Graphene.
ACS Nano. 2015 Dec 22;9(12):11509-39. doi: 10.1021/acsnano.5b05556. Epub 2015 Nov 24.
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In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy.
Nano Lett. 2015 Sep 9;15(9):5667-72. doi: 10.1021/acs.nanolett.5b00910. Epub 2015 Aug 21.
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Few-layered titanium trisulfide (TiS3) field-effect transistors.
Nanoscale. 2015 Aug 7;7(29):12291-6. doi: 10.1039/c5nr01895a. Epub 2015 Jul 1.
6
Titanium trisulfide monolayer: theoretical prediction of a new direct-gap semiconductor with high and anisotropic carrier mobility.
Angew Chem Int Ed Engl. 2015 Jun 22;54(26):7572-6. doi: 10.1002/anie.201502107. Epub 2015 May 12.
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TiS3 transistors with tailored morphology and electrical properties.
Adv Mater. 2015 Apr 24;27(16):2595-601. doi: 10.1002/adma.201405632. Epub 2015 Mar 13.
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Two-dimensional flexible nanoelectronics.
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