Randle Michael, Lipatov Alexey, Kumar Avinash, Kwan Chun-Pui, Nathawat Jubin, Barut Bilal, Yin Shenchu, He Keke, Arabchigavkani Nargess, Dixit Ripudaman, Komesu Takeshi, Avila José, Asensio Maria C, Dowben Peter A, Sinitskii Alexander, Singisetti Uttam, Bird Jonathan P
Department of Electrical Engineering , University at Buffalo, The State University of New York , Buffalo , New York 14260-1900 , United States.
Department of Chemistry , University of Nebraska-Lincoln , Lincoln , Nebraska 68588 , United States.
ACS Nano. 2019 Jan 22;13(1):803-811. doi: 10.1021/acsnano.8b08260. Epub 2018 Dec 28.
We explore the electrical characteristics of TiS nanowire field-effect transistor (FETs), over the wide temperature range from 3 to 350 K. These nanomaterials have a quasi-one-dimensional (1D) crystal structure and exhibit a gate-controlled metal-insulator transition (MIT) in their transfer curves. Their room-temperature mobility is ∼20-30 cm/(V s), 2 orders of magnitude smaller than predicted previously, a result that we explain quantitatively in terms of the influence of polar-optical phonon scattering in these materials. In the insulating state (<∼220 K), the transfer curves exhibit unusual mesoscopic fluctuations and a current suppression near zero bias that is common to charge-density wave (CDW) systems. The fluctuations have a nonmonotonic temperature dependence and wash out at a temperature close to that of the bulk MIT, suggesting they may be a feature of quantum interference in the CDW state. Overall, our results demonstrate that quasi-1D TiS nanostructures represent a viable candidate for FET realization and that their functionality is influenced by complex phenomena.
我们研究了硫化钛（TiS）纳米线场效应晶体管（FET）在3至350 K的宽温度范围内的电学特性。这些纳米材料具有准一维（1D）晶体结构，并且在其转移曲线中表现出门控金属-绝缘体转变（MIT）。它们的室温迁移率约为20-30 cm/(V s)，比先前预测的小2个数量级，我们根据这些材料中极性光学声子散射的影响对此结果进行了定量解释。在绝缘状态（<约220 K）下，转移曲线表现出异常的介观波动以及在零偏压附近的电流抑制，这是电荷密度波（CDW）系统所共有的。这些波动具有非单调的温度依赖性，并在接近体相MIT的温度下消失，表明它们可能是CDW状态下量子干涉的一个特征。总体而言，我们的结果表明，准一维TiS纳米结构是实现FET的可行候选材料，并且它们的功能受到复杂现象的影响。
