School of Engineering, RMIT University, Melbourne, Victoria, Australia.
School of Applied Sciences, RMIT University, Melbourne, Victoria, Australia.
Nanoscale. 2016 Sep 15;8(36):16276-16283. doi: 10.1039/c6nr04326g.
Two-dimensional (2D) transition metal chalcogenides such as 2D MoS are considered prime candidate materials for the design of next generation optoelectronics. Functionalisation of these materials is considered to be a key step in tailoring their properties towards specific applications and unlocking their full potential. Here we present a van der Waals functionalisation strategy for creating MoS nanosheets decorated with free base phthalocyanine chromophores. The semiconducting sheets are found to intimately interact with these optoelectronically active chromophores, resulting in an electronic heterostructure that exhibits enhanced optoelectronic properties and exploitable charge transfer. We show that by utilising laterally confined MoS nanosheets, the conduction band of the semiconductor could be positioned between the chromophore's S1 and S2 states. Consequently, bidirectional photoinduced electron transfer processes are observed, with excitation of the functionalised nanosheet's semiconductor transition resulting in electron transfer to the phthalocyanine's LUMO, and excitation of the chromophore's S2 state leading to electron injection into the MoS conduction band. However, charge transfer from the dye's S1 transition to the MoS nanosheet is found to be thermodynamically unfavourable, resulting in intense radiative recombination. These findings may enable controlling and tuning the charge carrier density of semiconducting nanosheets via optical means through the exploitation of photoinduced electron transfer. Furthermore this work provides access to 2D semiconductor-hybrids with tailored absorption profiles and photoluminescence.
二维(2D)过渡金属硫属化物,如 2D MoS,被认为是设计下一代光电器件的首选材料。这些材料的功能化被认为是调整其特性以满足特定应用并释放其全部潜力的关键步骤。在这里,我们提出了一种范德华功能化策略,用于创建用自由碱酞菁发色团修饰的 MoS 纳米片。发现这些半导体片与这些光电活性发色团密切相互作用,形成具有增强光电特性和可利用电荷转移的电子异质结构。我们表明,通过利用横向受限的 MoS 纳米片,可以将半导体的导带定位在发色团的 S1 和 S2 态之间。因此,观察到双向光致电子转移过程,功能化纳米片的半导体跃迁的激发导致电子转移到酞菁的 LUMO,而发色团的 S2 态的激发导致电子注入 MoS 导带。然而,发现从染料的 S1 跃迁到 MoS 纳米片的电荷转移在热力学上是不利的,导致强烈的辐射复合。这些发现可以通过光致电子转移来控制和调节半导体纳米片的电荷载流子密度。此外,这项工作提供了具有定制吸收谱和光致发光的二维半导体-杂化材料的途径。