Van Bui H, Grillo F, van Ommen J R
Chemical Engineering Department, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands.
Chem Commun (Camb). 2016 Dec 20;53(1):45-71. doi: 10.1039/c6cc05568k.
Atomic layer deposition (ALD) is a gas-phase deposition technique that, by relying on self-terminating surface chemistry, enables the control of the amount of deposited material down to the atomic level. While mostly used in semiconductor technology for the deposition of ceramic oxides and nitrides on wafers, ALD lends itself to the deposition of a wealth of materials on virtually every substrate. In particular, ALD and its organic counterpart molecular layer deposition (MLD), have opened up attractive avenues for the synthesis of novel nanostructured materials. However, as most ALD processes were developed and optimized for semiconductor technology, these might not be optimal for applications in fields such as catalysis, energy storage, and health. For this reason, novel applications for ALD often require new surface chemistries, process conditions, and reactor types. As a result, recent developments in ALD technology have marked a considerable departure from the standard set by well-established ALD processes. The aim of this review is twofold: firstly, to capture the recent departure of ALD from its original development; and secondly, to pinpoint the unexplored paths through which ALD can advance further in terms of synthesis of novel materials. To that end, we provide a review of the recent developments of ALD and MLD of materials that are gaining increasing attention on various substrates, with particular emphasis on high-surface-area substrates. Furthermore, we present a critical review of the effects of the process conditions, namely, temperature, pressure, and time on ALD growth. Finally, we also give a brief overview of the recent advances in ALD reactors and energy-enhanced ALD processes.
原子层沉积（ALD）是一种气相沉积技术，它依靠自终止表面化学，能够将沉积材料的量控制到原子水平。虽然ALD主要用于半导体技术中在晶圆上沉积陶瓷氧化物和氮化物，但它适用于在几乎任何衬底上沉积多种材料。特别是，ALD及其有机对应物分子层沉积（MLD）为新型纳米结构材料的合成开辟了有吸引力的途径。然而，由于大多数ALD工艺是为半导体技术开发和优化的，这些工艺可能不适用于催化、储能和健康等领域的应用。因此，ALD的新应用通常需要新的表面化学、工艺条件和反应器类型。结果，ALD技术的最新发展与成熟的ALD工艺所设定的标准有了很大的不同。本综述的目的有两个：第一，阐述ALD与它最初的发展情况相比近期出现的变化；第二，指出ALD在新型材料合成方面可以进一步发展的未探索路径。为此，我们综述了在各种衬底上越来越受关注的材料的ALD和MLD的最新发展，特别强调高表面积衬底。此外，我们对工艺条件，即温度、压力和时间对ALD生长的影响进行了批判性综述。最后，我们还简要概述了ALD反应器和能量增强型ALD工艺的最新进展。
