Leskelä Markku, Ritala Mikko
Department of Chemistry, University of Helsinki, P.O. Box 55, 00014 Helsinki, Finland.
Angew Chem Int Ed Engl. 2003 Nov 24;42(45):5548-54. doi: 10.1002/anie.200301652.
New materials, namely high-k (high-permittivity) dielectrics to replace SiO(2), Cu to replace Al, and barrier materials for Cu, are revolutionizing modern integrated circuits. These materials must be deposited as very thin films on structured surfaces. The self-limiting growth mechanism characteristic to atomic layer deposition (ALD) facilitates the control of film thickness at the atomic level and allows deposition on large and complex surfaces. These features make ALD a very promising technique for future integrated circuits. Recent ALD research has mainly focused on materials required in microelectronics. Chemistry, in particular the selection of suitable precursor combinations, is the key issue in ALD; many interesting results have been obtained by smart chemistry. ALD is also likely to find applications in other areas, such as magnetic recording heads, optics, demanding protective coatings, and micro-electromechanical systems, provided that cost-effective processes can be found for the materials required.
新材料，即用于取代二氧化硅的高k（高介电常数）电介质、用于取代铝的铜以及铜的阻挡材料，正在彻底改变现代集成电路。这些材料必须以非常薄的薄膜形式沉积在结构化表面上。原子层沉积（ALD）所特有的自限性生长机制有助于在原子水平上控制薄膜厚度，并允许在大型复杂表面上进行沉积。这些特性使ALD成为未来集成电路极具前景的技术。最近的ALD研究主要集中在微电子所需的材料上。化学，尤其是合适前驱体组合的选择，是ALD中的关键问题；通过巧妙的化学方法已经取得了许多有趣的成果。只要能找到适用于所需材料的具有成本效益的工艺，ALD也很可能在其他领域找到应用，如磁记录头、光学、高要求的保护涂层以及微机电系统。
