Chen Chih-Ming, Lin Zheng-Kun, Huang Wei-Jie, Yang Sheng-Hsiung
Institute of Lighting and Energy Photonics, National Chiao Tung University, No. 301, Gaofa 3rd Road, Guiren District, Tainan, 71150, Taiwan, ROC.
Nanoscale Res Lett. 2016 Dec;11(1):464. doi: 10.1186/s11671-016-1670-8. Epub 2016 Oct 18.
In this work, we demonstrate a novel carrier transporting combination made of tungsten trioxide (WO) nanomaterials and CsCO/PCBM buffer bilayer for the fabrication of perovskite solar cells (PSCs). Two different types of WO, including nanoparticles and nanorods, were prepared by sol-gel process and hydrothermal method, respectively. CsCO/PCBM buffer bilayer was inserted between WO and perovskite layers to improve charge transfer efficiency and formation of pinhole-free perovskite layer. Besides, the leakage current of the devices containing CsCO/PCBM buffer bilayer was significantly suppressed. The optimized device based on WO nanoparticles and CsCO/PCBM bilayer showed an open-circuit voltage of 0.84 V, a short-circuit current density of 20.40 mA/cm, a fill factor of 0.61, and a power conversion efficiency of 10.49 %, which were significantly higher than those of PSCs without CsCO/PCBM buffer bilayer. The results revealed that the combination of WO nanomaterials and CsCO/PCBM bilayer provides an effective solution for improving performances of PSCs.
在这项工作中，我们展示了一种由三氧化钨（WO）纳米材料和CsCO/PCBM缓冲双层组成的新型载流子传输组合，用于制备钙钛矿太阳能电池（PSC）。分别通过溶胶-凝胶法和水热法制备了两种不同类型的WO，包括纳米颗粒和纳米棒。在WO和钙钛矿层之间插入CsCO/PCBM缓冲双层，以提高电荷转移效率并形成无针孔的钙钛矿层。此外，含有CsCO/PCBM缓冲双层的器件的漏电流得到了显著抑制。基于WO纳米颗粒和CsCO/PCBM双层的优化器件显示出开路电压为0.84 V，短路电流密度为20.40 mA/cm，填充因子为0.61，功率转换效率为10.49%，这显著高于没有CsCO/PCBM缓冲双层的PSC。结果表明，WO纳米材料和CsCO/PCBM双层的组合为提高PSC的性能提供了一种有效的解决方案。
