McIntosh R, Henley S J, Silva S R P, Bhattacharyya S
Nano-scale Transport Physics Laboratory, School of Physics, and Centre of Excellence in Strong Materials, University of the Witwatersrand, Private Bag 3, WITS 2050, Johannesburg, South Africa.
Advanced Technology Institute, University of Surrey, Guildford, Surrey, GU2 7XH, UK.
Sci Rep. 2016 Oct 19;6:35526. doi: 10.1038/srep35526.
Whilst resonant transmission is well understood and can be fully harnessed for crystalline superlattices, a complete picture has not yet emerged for disordered superlattices. It has proven difficult to tune resonant transmission in disordered diamond-like carbon (DLC) superlattices as conventional models are not equipped to incorporate significant structural disorder. In this work, we present concurrent experimental and theoretical analysis which addresses resonant transmission in DLC superlattices. Devices were fabricated by growing alternate layers of DLC with different percentages of sp hybridized carbon.Coherent quantum transport effects were demonstrated in these structurally disordered DLC superlattices through distinct current modulation with negative differential resistance (NDR) in the current-voltage (I-V) measurements. A model was developed using tight-binding calculations assuming a random variation of the hopping integral to simulate structural (bond-length) disorder. Calculations of the I-V characteristics compliment the interpretation of the measurements and illustrate that while DLC superlattice structures are unlike their classical counterparts, the near-field structural order will help with the confinement of quantised states. The present model provides an empirical guide for tailoring the properties of future devices, giving rise to much hope that carbon electronics operating at high frequencies over large areas can now be developed.
虽然共振传输已被充分理解,并且可以在晶体超晶格中得到充分利用,但对于无序超晶格,尚未形成完整的认识。事实证明,在类金刚石碳(DLC)无序超晶格中调节共振传输很困难,因为传统模型无法纳入显著的结构无序。在这项工作中,我们给出了关于DLC超晶格中共振传输的同步实验和理论分析。通过生长具有不同sp杂化碳百分比的交替DLC层来制造器件。在这些结构无序的DLC超晶格中,通过电流-电压(I-V)测量中具有负微分电阻(NDR)的明显电流调制,证明了相干量子输运效应。使用紧束缚计算开发了一个模型,假设跳跃积分的随机变化来模拟结构(键长)无序。I-V特性的计算补充了测量结果的解释,并表明虽然DLC超晶格结构与经典结构不同,但近场结构有序将有助于量子态的限制。本模型为定制未来器件的特性提供了经验指导,带来了很大的希望,即现在可以开发在大面积上高频运行的碳电子器件。