Department of Advanced Materials, Hannam University , Daejeon 305-811, South Korea.
ACS Appl Mater Interfaces. 2016 Nov 16;8(45):30964-30971. doi: 10.1021/acsami.6b10570. Epub 2016 Nov 3.
We report the exfoliation of graphite and simultaneous N doping of graphene by two methods: supercritical ammonia treatment and liquid-phase exfoliation with NHOH. While the supercritical ammonia allowed N doping at a level of 6.4 atom % in 2 h, the liquid-phase exfoliation with NHOH allowed N doping at a level of 2.7 atom % in 6 h. The N doped graphene obtained via the supercritical ammonia route had few layers (<5) and showed large lateral flake size (∼8 μm) and low defect density (I/I < 0.6) in spite of their high level of N doping. This work is the first demonstration of supercritical ammonia as an exfoliation agent and N doping precursor for graphene. Notably, the N doped graphene showed electrocatalytic activity toward oxygen reduction reaction with high durability and good methanol tolerance compared to those of commercial Pt/C catalyst.
超临界氨处理和用 NHOH 进行液相剥离,实现石墨的剥落和石墨烯的同时氮掺杂。超临界氨在 2 小时内允许氮掺杂达到 6.4 原子%,而用 NHOH 进行液相剥离在 6 小时内允许氮掺杂达到 2.7 原子%。通过超临界氨途径获得的氮掺杂石墨烯具有较少的层数(<5),并且表现出较大的横向薄片尺寸(~8 μm)和低缺陷密度(I/I < 0.6),尽管其氮掺杂水平较高。这项工作首次证明了超临界氨作为石墨烯的剥落剂和氮掺杂前体。值得注意的是,与商业 Pt/C 催化剂相比,氮掺杂石墨烯对氧还原反应表现出高耐久性和良好的甲醇耐受性的电催化活性。