通过脉冲激光沉积原位生长超导SmOFFeAs薄膜。

In-situ growth of superconducting SmOFFeAs thin films by pulsed laser deposition.

作者信息

Haindl Silvia, Hanzawa Kota, Sato Hikaru, Hiramatsu Hidenori, Hosono Hideo

机构信息

Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Mailbox R3-1, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8503, Japan.

Physikalisches Institut, Universität Tübingen, 72076 Tübingen, Germany.

出版信息

Sci Rep. 2016 Oct 21;6:35797. doi: 10.1038/srep35797.

DOI:10.1038/srep35797

PMID:27767066

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5073333/

Abstract

Oxypnictide thin film growth by pulsed laser deposition (PLD) is one of many insufficiently resolved issues in the research of iron-based superconductors. Here we report on the successful realization of superconducting SmOFFeAs oxypnictide thin film growth by in-situ PLD on CaF (fluorite) substrates. CaF acts as fluorine supplier by diffusion and thus enables superconducting oxypnictide thin film growth by PLD. Films are grown heteroepitaxially and characteristically have a broad resistive normal-to-superconducting transition. Best films have onset transition temperatures around 40 K. The proposed in-situ PLD film growth offers an alternative and cheap route for the fabrication of iron oxypnictides. PLD becomes now an additional option for iron oxypnictide synthesis.

摘要

通过脉冲激光沉积（PLD）生长氧族氮化物薄膜是铁基超导体研究中众多尚未充分解决的问题之一。在此，我们报告了通过在CaF（萤石）衬底上进行原位PLD成功实现超导SmOFFeAs氧族氮化物薄膜的生长。CaF通过扩散充当氟供应商，从而使得能够通过PLD生长超导氧族氮化物薄膜。薄膜以异质外延方式生长，其特征是具有从正常态到超导态的宽电阻转变。最佳薄膜的起始转变温度约为40 K。所提出的原位PLD薄膜生长为制备氧族铁化物提供了一种替代且廉价的途径。PLD现在成为了合成氧族铁化物的又一选择。