Jelínek Miroslav, Vaněk Přemysl, Tolde Zdeněk, Buixaderas Elena, Kocourek Tomáš, Studnička Václav, Drahokoupil Jan, Petzelt Jan, Remsa Jan, Tyunina Marina
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic; Czech Technical University in Prague, Faculty of Biomedical Engineering, nam. Sitna 3108, 212 01 Kladno, Czech Republic.
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic.
Mater Sci Eng C Mater Biol Appl. 2017 Jan 1;70(Pt 1):334-339. doi: 10.1016/j.msec.2016.08.072. Epub 2016 Sep 6.
BaTiO (BTO) layers were deposited by pulsed laser deposition (PLD) on TiNb, Pt/TiNb, Si (100), and fused silica substrates using various deposition conditions. Polycrystalline BTO with sizes of crystallites in the range from 90nm to 160nm was obtained at elevated substrate temperatures of (600°C-700°C). With increasing deposition temperature above 700°C the formation of unwanted rutile phase prevented the growth of perovskite ferroelectric BTO. Concurrently, with decreasing substrate temperature below 500°C, amorphous films were formed. Post-deposition annealing of the amorphous deposits allowed obtaining perovskite BTO. Using a very thin Pt interlayer between the BTO films and TiNb substrate enabled high-temperature growth of preferentially oriented BTO. Raman spectroscopy and electrical characterization indicated polar ferroelectric behaviour of the BTO films.
采用脉冲激光沉积（PLD）技术，在不同沉积条件下，将钛酸钡（BTO）层沉积在钛铌（TiNb）、铂/钛铌（Pt/TiNb）、硅（Si）（100）和熔融石英衬底上。在600°C - 700°C的较高衬底温度下，获得了晶粒尺寸在90nm至160nm范围内的多晶BTO。当沉积温度高于700°C时，不需要的金红石相的形成阻碍了钙钛矿铁电BTO的生长。同时，当衬底温度低于500°C时，会形成非晶薄膜。对非晶沉积物进行沉积后退火可得到钙钛矿BTO。在BTO薄膜和TiNb衬底之间使用非常薄的铂中间层能够实现择优取向BTO的高温生长。拉曼光谱和电学表征表明BTO薄膜具有极性铁电行为。
