Choi J S, Hwang I R, Hong S H, Oh G T, Choi J A, Jeon S H, Kang S O, Yalishev Vadim Sh, Park B H, Choi Chang-Hak, Ahn Cheol-Woo, Nahm Sahn, Ahn Sang Jun
Department of Physics, Konkuk University, Seoul 143-701, Korea.
J Nanosci Nanotechnol. 2009 Dec;9(12):7354-8. doi: 10.1166/jnn.2009.1759.
We have investigated structural, electrical, and electro-mechanical properties of lead-free piezoelectric BaTiO3 doped Na0.5K0.5NbO3 (BTO-NKN) thin films deposited by pulsed laser deposition (PLD) methods. BTO-NKN thin films have been deposited on La0.5Sr0.5CoO3 (LSCO) bottom electrodes with LaAlO3 (LAO) substrates. X-ray diffraction data have shown that all the BTO-NKN and bottom electrodes are highly oriented with their c-axes normal to the substrates. In order to improve the morphology of BTO-NKN thin films, we have located an eclipse shutter between a target and a substrate. Root-mean-square roughness was changed from 91 nm to 21 nm with eclipse shutter enhanced PLD (E-PLD) method. Furthermore, the enhanced surface morphology leads to the improvement in electrical or electro-mechanical properties mainly due to increased density. Typical capacitance and d33 values of a BTO-NKN film deposited by E-PLD method are 1000 pF and 30 pmN, respectively.
我们研究了通过脉冲激光沉积（PLD）方法制备的无铅压电BaTiO3掺杂Na0.5K0.5NbO3（BTO-NKN）薄膜的结构、电学和机电性能。BTO-NKN薄膜已沉积在具有LaAlO3（LAO）衬底的La0.5Sr0.5CoO3（LSCO）底部电极上。X射线衍射数据表明，所有BTO-NKN和底部电极的c轴均垂直于衬底高度取向。为了改善BTO-NKN薄膜的形貌，我们在靶材和衬底之间设置了一个遮光快门。采用带遮光快门增强型PLD（E-PLD）方法，均方根粗糙度从91nm变为21nm。此外，表面形貌的改善主要由于密度增加，从而导致电学或机电性能的提高。通过E-PLD方法制备的BTO-NKN薄膜的典型电容和d33值分别为1000pF和30pm/N。
