Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
Adv Mater. 2017 Jan;29(1). doi: 10.1002/adma.201600970. Epub 2016 Oct 24.
Realization of permanent valley polarization in Cr-doped monolayer MoS is found to be unfeasible because of extended moment formation. Introduction of an additional hole is suggested as a viable solution. V-doped monolayer MoS is demonstrated to sustain permanent valley polarization and therefore can serve as a prototype material for valleytronics.
发现在 Cr 掺杂的单层 MoS 中实现永久谷极化是不可行的,因为会形成扩展的磁矩。建议引入额外的空穴作为一种可行的解决方案。研究表明 V 掺杂的单层 MoS 可以维持永久的谷极化,因此可以作为谷电子学的原型材料。