Duan Hengli, Guo Peng, Wang Chao, Tan Hao, Hu Wei, Yan Wensheng, Ma Chao, Cai Liang, Song Li, Zhang Wenhua, Sun Zhihu, Wang Linjun, Zhao Wenbo, Yin Yuewei, Li Xiaoguang, Wei Shiqiang
National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230029, Hefei, Anhui, China.
Key Laboratory of Neutronics and Radiation Safety, Institute of Nuclear Energy Safety Technology, Chinese Academy of Sciences, 230031, Hefei, Anhui, China.
Nat Commun. 2019 Apr 5;10(1):1584. doi: 10.1038/s41467-019-09531-0.
Monolayer chalcogenide semiconductors with both luminescent and ferromagnetic properties are dreamed for simultaneous polarization and detection of the valley degree of freedom in valleytronics. However, a conventional chalcogenide monolayer lacks these coexisting properties due to their mutually exclusive origins. Herein we demonstrate that robust ferromagnetism and photoluminescence (PL) could be achieved in a (Co, Cr)-incorporated single monolayer MoS, where the ferromagnetic interaction is activated by Co ions, and the nonradiative recombination channels of excitons is cut off by Cr ions. This strategy brings a 90-fold enhancement of saturation magnetization and 35-fold enhancement of PL intensity than the pristine MoS monolayer. The main reasons for the coexisting ferromagnetism and PL are the electronic interactions between the impurity bands of atop Cr adatoms and substitutional Co atoms, as well as the increased content of neutral exciton. Our findings could extend the applications of two-dimensional chalcogenides into spintronics, valleytronic and photoelectric devices.
具有发光和铁磁特性的单层硫族化物半导体有望用于谷电子学中谷自由度的同时极化和检测。然而,传统的硫族化物单层由于其相互排斥的起源而缺乏这些共存特性。在此,我们证明了在掺入(钴,铬)的单层二硫化钼中可以实现强铁磁性和光致发光(PL),其中铁磁相互作用由钴离子激活,而激子的非辐射复合通道被铬离子切断。该策略使饱和磁化强度提高了90倍,PL强度比原始的单层二硫化钼提高了35倍。铁磁性和PL共存的主要原因是顶部铬吸附原子和替代钴原子的杂质带之间的电子相互作用,以及中性激子含量的增加。我们的发现可以将二维硫族化物的应用扩展到自旋电子学、谷电子学和光电器件中。