Department of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Korea.
Nanotechnology. 2016 Dec 2;27(48):485401. doi: 10.1088/0957-4484/27/48/485401. Epub 2016 Oct 31.
In this study, we demonstrate the substantial enhancement of the thermoelectric power factors of silicon nanowires (SiNWs) on plastic substrates achievable by field-effect modulation. The Seebeck coefficient and electrical conductivity are adjusted by varying the charge carrier concentration via electrical modulation with a gate voltage in the 0 to ±5 range, thus enhancing the power factors from 2.08 to 935 μW K m) for n-type SiNWs, and from 453 to 944 μW K m) for p-type SiNWs. The electrically modulated thermoelectric characteristics of SiNWs are analyzed and discussed.
在这项研究中，我们证明了通过场效应调制，可以显著提高塑料衬底上硅纳米线（SiNWs）的热电功率因子。通过在 0 到±5V 的栅极电压范围内进行电调制来改变载流子浓度，可以调节 Seebeck 系数和电导率，从而将 n 型 SiNWs 的功率因子从 2.08 提高到 935 μW K m)，将 p 型 SiNWs 的功率因子从 453 提高到 944 μW K m)。分析和讨论了 SiNWs 的电调制热电特性。
