Hyun Younghoon, Park Youngsam, Choi Wonchul, Kim Jaehyeon, Zyung Taehyoung, Jang Moongyu
Nanotechnology Convergence Components Research Department, Electronics and Telecommunications Research Institute, Daejeon, 305-700, Korea.
Nanotechnology. 2012 Oct 12;23(40):405707. doi: 10.1088/0957-4484/23/40/405707. Epub 2012 Sep 20.
Silicon-based thermoelectric nanowires were fabricated by using complementary metal-oxide-semiconductor (CMOS) technology. 50 nm width n- and p-type silicon nanowires (SiNWs) were manufactured using a conventional photolithography method on 8 inch silicon wafer. For the evaluation of the Seebeck coefficients of the silicon nanowires, heater and temperature sensor embedded test patterns were fabricated. Moreover, for the elimination of electrical and thermal contact resistance issues, the SiNWs, heater and temperature sensors were fabricated monolithically using a CMOS process. For validation of the temperature measurement by an electrical method, scanning thermal microscopy analysis was carried out. The highest Seebeck coefficients were - 169.97 μV K(-1) and 152.82 μV K(-1) and the highest power factors were 2.77 mW m(-1) K(-2) and 0.65 mW m(-1) K(-2) for n- and p-type SiNWs, respectively, in the temperature range from 200 to 300 K. The larger power factor value for n-type SiNW was due to the higher electrical conductivity. The total Seebeck coefficient and total power factor for the n- and p-leg unit device were 157.66 μV K(-1) and 9.30 mW m(-1) K(-2) at 300 K, respectively.
基于硅的热电纳米线是通过互补金属氧化物半导体（CMOS）技术制造的。采用传统光刻方法在8英寸硅片上制造了宽度为50nm的n型和p型硅纳米线（SiNWs）。为了评估硅纳米线的塞贝克系数，制作了嵌入加热器和温度传感器的测试图案。此外，为了消除电接触电阻和热接触电阻问题，采用CMOS工艺整体制造了SiNWs、加热器和温度传感器。为了通过电学方法验证温度测量，进行了扫描热显微镜分析。在200至300K的温度范围内，n型和p型SiNWs的最高塞贝克系数分别为-169.97μV K⁻¹和152.82μV K⁻¹，最高功率因子分别为2.77mW m⁻¹ K⁻²和0.65mW m⁻¹ K⁻²。n型SiNW较大的功率因子值归因于其较高的电导率。在300K时，n型和p型腿单元器件的总塞贝克系数和总功率因子分别为157.66μV K⁻¹和9.30mW m⁻¹ K⁻²。
