Sun Yanmei, Lu Junguo, Ai Chunpeng, Wen Dianzhong, Bai Xuduo
HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China.
School of Chemistry and Materials Science, Heilongjiang University, Harbin, 150080, China.
Phys Chem Chem Phys. 2016 Nov 9;18(44):30808-30814. doi: 10.1039/c6cp06084f.
Memory devices based on composites of polystyrene (PS) and [6,6]-phenyl-C-butyric acid methyl ester (PCBM) were investigated with bistable resistive switching behavior. Current-voltage (I-V) curves for indium-tin-oxide (ITO)/PS + PCBM/Al devices with 33 wt% PCBM showed non-volatile, rewritable, flash memory properties with a maximum ON/OFF current ratio of 1 × 10, which was 100 times larger than the ON/OFF ratio of the device with 5 wt% PCBM. For ITO/PS + PCBM/Al devices with 33 wt% PCBM, the write-read-erase-read test cycles demonstrated the bistable devices with ON and OFF states at the same voltage. The programmable ON and OFF states endured up to 10 read pulses and possessed a retention time of over 10 s, indicative of the memory stability of the device. In the OFF state, the I-V curve at lower voltages up to 0.45 V was attributed to the thermionic emission mechanism, and the I-V characteristics in the applied voltage above 0.5 V dominantly followed the space-charge-limited-current behaviors. In the ON state, the curve in the applied voltage range was related to an Ohmic mechanism.
对基于聚苯乙烯（PS）和[6,6]-苯基-C-丁酸甲酯（PCBM）复合材料的存储器件进行了具有双稳态电阻开关行为的研究。含33 wt% PCBM的氧化铟锡（ITO）/PS + PCBM/Al器件的电流-电压（I-V）曲线显示出非易失性、可重写的闪存特性，最大开/关电流比为1×10，这比含5 wt% PCBM的器件的开/关比大100倍。对于含33 wt% PCBM的ITO/PS + PCBM/Al器件，写-读-擦除-读测试循环表明双稳态器件在相同电压下具有开和关状态。可编程的开和关状态能承受多达10个读脉冲，保持时间超过10秒，表明该器件具有存储稳定性。在关态下，高达0.45 V的较低电压下的I-V曲线归因于热电子发射机制，而施加电压高于0.5 V时的I-V特性主要遵循空间电荷限制电流行为。在开态下，施加电压范围内的曲线与欧姆机制有关。
