具有极高响应率的 ZnO 量子点掺杂石墨烯/六方氮化硼/氮化镓异质结构紫外光探测器。
ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity.
机构信息
College of Microelectronics, College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China.
出版信息
Nanotechnology. 2016 Dec 2;27(48):48LT03. doi: 10.1088/0957-4484/27/48/48LT03. Epub 2016 Nov 2.
A ZnO quantum dot photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 A W and detectivity of more than 1.02 × 10 Jones (Jones = cm Hz W) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 A W to 1915 A W and the detectivity is improved from 5.8 × 10 to 1.0 × 10 Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.
已经展示了一种具有超高响应度（超过 1915 A W）和探测率（超过 1.02×10 琼斯）的 ZnO 量子点光掺杂石墨烯/h-BN/GaN 异质结构紫外光电探测器。界面 h-BN 层增加了石墨烯/GaN 异质结处的势垒高度，从而降低了暗电流并提高了器件的开/关电流比。光掺杂效应增加了石墨烯/h-BN/GaN 异质结处的势垒高度和载流子浓度，从而将响应度从 1473 A W 提高到 1915 A W，将探测率从 5.8×10 提高到 1.0×10 琼斯。此外，所有的响应度和探测率值均为所有基于石墨烯的紫外光电探测器中的最高值。
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