Dąbek Michał, Wiśniowski Piotr, Stobiecki Tomasz, Wrona Jerzy, Cardoso Susana, Freitas Paulo P
Department of Electronics, AGH University of Science and Technology, Krakow 30-059, Poland.
Silicon Creations, 49 Highway 23 NE, Suwanee 30024, GA, USA.
Sensors (Basel). 2016 Oct 31;16(11):1821. doi: 10.3390/s16111821.
As single tunneling magnetoresistive (TMR) sensor performance in modern high-speed applications is limited by breakdown voltage and saturation of the sensitivity, for higher voltage applications (i.e., compatible to 1.8 V, 3.3 V or 5 V standards) practically only a series connection can be applied. Thus, in this study we focused on sensitivity, 3 dB bandwidth and sensitivity-bandwidth product (SBP) dependence on the DC bias voltage in single and series-connected TMR sensors. We show that, below breakdown voltage, the strong bias influence on sensitivity and the 3 dB frequency of a single sensor results in higher SBP than in a series connection. However, the sensitivity saturation limits the single sensor SBP which, under 1 V, reaches the same level of 2000 MHz∙V/T as in a series connection. Above the single sensor breakdown voltage, linear sensitivity dependence on the bias and the constant 3 dB bandwidth of the series connection enable increasing its SBP up to nearly 10,000 MHz∙V/T under 5 V. Thus, although by tuning bias voltage it is possible to control the sensitivity-bandwidth product, the choice between the single TMR sensor and the series connection is crucial for the optimal performance in the high frequency range.
由于现代高速应用中单个隧道磁阻(TMR)传感器的性能受到击穿电压和灵敏度饱和的限制,对于更高电压的应用(即与1.8V、3.3V或5V标准兼容),实际上只能采用串联连接。因此,在本研究中,我们重点关注了单个和串联TMR传感器中灵敏度、3dB带宽以及灵敏度-带宽积(SBP)对直流偏置电压的依赖性。我们表明,在击穿电压以下,单个传感器中偏置对灵敏度和3dB频率的强烈影响导致其SBP高于串联连接。然而,灵敏度饱和限制了单个传感器的SBP,在1V以下,其达到与串联连接相同的2000MHz∙V/T水平。在单个传感器的击穿电压以上,灵敏度对偏置的线性依赖性以及串联连接恒定的3dB带宽使得在5V以下其SBP能够增加到近10,000MHz∙V/T。因此,尽管通过调整偏置电压可以控制灵敏度-带宽积,但在高频范围内,单个TMR传感器和串联连接之间的选择对于实现最佳性能至关重要。