通过界面工程实现无铅氧化物多层膜电容器的超高储能性能。
Ultrahigh Energy Storage Performance of Lead-Free Oxide Multilayer Film Capacitors via Interface Engineering.
机构信息
School of Electronic and Information Engineering and, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, P. R. China.
State Key Laboratory for Mechanical Behavior of Materials and, School of Material Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, P. R. China.
出版信息
Adv Mater. 2017 Feb;29(5). doi: 10.1002/adma.201604427. Epub 2016 Nov 29.
Ultrahigh energy storage density of 52.4 J cm with optimistic efficiency of 72.3% is achieved by interface engineering of epitaxial lead-free oxide multilayers at room temperature. Moreover, the excellent thermal stability of the performances provides solid basis for widespread applications of the thin film systems in modern electronic and power modules in harsh working environments.
通过室温下外延无铅氧化物多层膜的界面工程，实现了 52.4 J cm 超高能量存储密度，且效率高达 72.3%。此外，优异的性能热稳定性为薄膜系统在恶劣工作环境下的现代电子和电力模块中的广泛应用提供了坚实的基础。
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