Center for Nanochemistry, Beijing Science and Engineering Technology Research Center for Low Dimensional Carbon Materials, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China.
Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing, 210046, People's Republic of China.
Top Curr Chem (Cham). 2016 Dec;374(6):85. doi: 10.1007/s41061-016-0085-4. Epub 2016 Nov 30.
The synthesis of SWNTs has achieved great success with the development of synthetic methodologies. From the viewpoint of exploiting the exceptional electrical properties of single-walled carbon nanotubes (SWNTs) in advanced applications, one of the most difficult challenges is how to assemble the SWNTs with high degrees of alignment and purity in electronic conducting (mainly semiconducting) behavior into functional nanodevices. Numerous approaches have been developed to reach this goal, which could be divided into two categories. One is direct preparation of SWNT arrays on the substrate, and the other is self-assembly of pre-sorted SWNTs from solution. The former one obtains SWNT arrays via chemical vapor deposition (CVD) growth, with the sorting realized by either selective growth or post-growth treatment; the latter one assembles SWNT into arrays from solution, with the sorting process occurring before the aligning process in most cases. This review will highlight both in situ and post-synthetic approaches for preparing samples of aligned arrays of SWNTs with well-defined electronic properties-including the working mechanism for directional growth of SWNTs, growth/sorting methods like catalyst engineering, cloning/cap engineering, in situ etching, and ex situ selective removal/etching for surface-grown SWNT sample, and assembling technologies from SWNT solution such as dielectrophoresis, adsorption on lithographically patterned and/or chemically functionalized substrates, Langmuir-Blodgett and Langmuir-Schaefer techniques, and evaporation-driven self-assembly-and research efforts towards direct growth of arrays of complex SWNT structures.
随着合成方法的发展，SWNTs 的合成已经取得了巨大的成功。从开发单壁碳纳米管（SWNTs）在先进应用中的特殊电性能的角度来看，最困难的挑战之一是如何将具有高度取向和纯度的 SWNTs 组装成具有电子传导（主要是半导体）行为的功能纳米器件。已经开发了许多方法来实现这一目标，这些方法可以分为两类。一种是在衬底上直接制备 SWNT 阵列，另一种是从溶液中自组装经过预分类的 SWNT。前者通过化学气相沉积（CVD）生长获得 SWNT 阵列，通过选择性生长或后生长处理来实现分类；后者将 SWNT 从溶液中组装成阵列，在大多数情况下，分类过程发生在取向过程之前。这篇综述将重点介绍原位和后合成方法，用于制备具有明确定义的电子性能的 SWNT 取向阵列样品，包括 SWNT 定向生长的工作机制、催化剂工程、克隆/帽工程、原位刻蚀和表面生长 SWNT 样品的外场选择性去除/刻蚀等生长/分类方法，以及从 SWNT 溶液中组装的技术，如介电泳、在光刻图案化和/或化学功能化衬底上的吸附、Langmuir-Blodgett 和 Langmuir-Schaefer 技术以及蒸发驱动的自组装，以及直接生长复杂 SWNT 结构阵列的研究努力。
