Zhang Jiazhen, Yang Luhan, Xu Huang, Zhou Jie, Sang Yuxiang, Cui Zhuangzhuang, Liu Changlong, Liu Jingjing, Guo Tianle, Wang Xingjun, Wang Lin, Chen Gang, Chen Xiaoshuang
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
University of Chinese Academy of Sciences, Beijing 100049, China.
Sensors (Basel). 2022 Jan 10;22(2):490. doi: 10.3390/s22020490.
It is challenging to obtain wafer-scaled aligned films for completely exploiting the promising properties of semiconducting single-walled carbon nanotubes (s-SWCNTs). Aligned s-SWCNTs with a large area can be obtained by combining water evaporation and slow withdrawal-induced self-assembly in a dip-coating process. Moreover, the tunability of deposition morphology parameters such as stripe width and spacing is examined. The polarized Raman results show that s-SWCNTs can be aligned in ±8.6°. The derived two terminal photodetector shows both a high negative responsivity of 41 A/W at 520 nm and high polarization sensitivity. Our results indicate that aligned films with a large area may be useful to electronics- and optoelectronics-related applications.
要获得晶圆级对齐的薄膜以充分利用半导体单壁碳纳米管(s-SWCNT)的优异性能具有挑战性。通过在浸涂过程中结合水蒸发和缓慢提拉诱导的自组装,可以获得大面积的对齐s-SWCNT。此外,还研究了诸如条纹宽度和间距等沉积形态参数的可调性。偏振拉曼结果表明,s-SWCNT可以在±8.6°内对齐。所制备的双端光电探测器在520nm处具有41A/W的高负响应率和高偏振灵敏度。我们的结果表明,大面积的对齐薄膜可能对电子和光电子相关应用有用。