Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Korea.
School of Natural Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea.
Sci Rep. 2016 Dec 15;6:38730. doi: 10.1038/srep38730.
1 T phase incorporation into 2H-MoS via an optimal electron irradiation leads to induce a weak ferromagnetic state at room temperature, together with the improved transport property. In addition to the 1T-like defects, the electron irradiation on the cleaved MoS surface forms the concentric circle-type defects that are caused by the 2 H/1 T phase transition and the vacancies of the nearby S atoms of the Mo atoms. The electron irradiation-reduced bandgap is promising in vanishing the Schottky barrier to attaining spintronics device. The simple method to control and improve the magnetic and electrical properties on the MoS surface provides suitable ways for the low-dimensional device applications.
1T 相在通过最佳电子辐照掺入 2H-MoS 中时，可在室温下诱导弱铁磁态，并改善输运性质。除了类 1T 缺陷外，电子辐照在劈开的 MoS 表面上形成的同心环型缺陷是由 2H/1T 相变和附近 Mo 原子的 S 原子空位引起的。电子辐照减小的带隙有望消除肖特基势垒，实现自旋电子器件。控制和改善 MoS 表面磁电性能的简单方法为低维器件应用提供了合适的途径。
