缺陷诱导的MoTeP中的铁磁有序和室温负磁阻

Defect induced ferromagnetic ordering and room temperature negative magnetoresistance in MoTeP.

作者信息

Pal Debarati, Kumar Shiv, Shahi Prashant, Dan Sambhab, Verma Abhineet, Gangwar Vinod K, Singh Mahima, Chakravarty Sujoy, Uwatoko Yoshiya, Saha Satyen, Patil Swapnil, Chatterjee Sandip

机构信息

Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221005, India.

Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-Hiroshima City, 739-0046, Japan.

出版信息

Sci Rep. 2021 Apr 27;11(1):9104. doi: 10.1038/s41598-021-88669-8.

DOI:10.1038/s41598-021-88669-8

PMID:33907273

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8079386/

Abstract

The magneto-transport, magnetization and theoretical electronic-structure have been investigated on type-II Weyl semimetallic MoTeP. The ferromagnetic ordering is observed in the studied sample and it has been shown that the observed magnetic ordering is due to the defect states. It has also been demonstrated that the presence of ferromagnetic ordering in effect suppresses the magnetoresistance (MR) significantly. Interestingly, a change-over from positive to negative MR is observed at higher temperature which has been attributed to the dominance of spin scattering suppression.

摘要

对II型外尔半金属MoTeP的磁输运、磁化和理论电子结构进行了研究。在所研究的样品中观察到铁磁有序，并且已经表明所观察到的磁有序归因于缺陷态。还证明了铁磁有序的存在实际上显著抑制了磁电阻（MR）。有趣的是，在较高温度下观察到磁电阻从正变为负的转变，这归因于自旋散射抑制的主导作用。