Pierson B, Van Wagenenn S, Nebesny K W, Fernando Q, Scott N, Carter D E
Department of Chemistry, University of Arizona, Tucson 85721.
Am Ind Hyg Assoc J. 1989 Sep;50(9):455-9. doi: 10.1080/15298668991374985.
Crystalline gallium arsenide (GaAs) was found to dissolve in an aqueous solution containing the inorganic anions, chloride, sulfate, bicarbonate, monohydrogen phosphate, and dihydrogen phosphate, and the organic anions, acetate and citrate. The aqueous solution was made up to resemble lung fluid (Gamble solution) and was maintained at a pH of 7.4. The concentrations of arsenic (As) and gallium (Ga) in solution and the As-GA ratio on the surface of the GaAs increased continuously as the time of contact with the aqueous solution increased. X-ray photoelectron spectroscopic studies of the GaAs surface, at various time intervals, showed that As migrated to the surface and was oxidized to a species resembling As2O3 and, finally, was dissolved. The zinc present in the crystalline GaAs also migrated to the surface.
发现结晶砷化镓（GaAs）可溶解于含有无机阴离子（氯离子、硫酸根离子、碳酸氢根离子、磷酸氢根离子和磷酸二氢根离子）以及有机阴离子（乙酸根离子和柠檬酸根离子）的水溶液中。该水溶液被配制得类似于肺液（甘布尔溶液），并保持在pH值为7.4。随着与水溶液接触时间的增加，溶液中砷（As）和镓（Ga）的浓度以及GaAs表面的As-Ga比值持续增加。在不同时间间隔对GaAs表面进行的X射线光电子能谱研究表明，As迁移到表面并被氧化成类似As2O3的物质，最终溶解。结晶GaAs中存在的锌也迁移到了表面。
