Benmakhlouf Hamza, Andreo Pedro
Department of Medical Radiation Physics and Nuclear Medicine, Karolinska University Hospital, SE-17176, Stockholm, Sweden.
Med Phys. 2017 Feb;44(2):713-724. doi: 10.1002/mp.12042. Epub 2017 Jan 30.
Correction factors for the relative dosimetry of narrow megavoltage photon beams have recently been determined in several publications. These corrections are required because of the several small-field effects generally thought to be caused by the lack of lateral charged particle equilibrium (LCPE) in narrow beams. Correction factors for relative dosimetry are ultimately necessary to account for the fluence perturbation caused by the detector. For most small field detectors the perturbation depends on field size, resulting in large correction factors when the field size is decreased. In this work, electron and photon fluence differential in energy will be calculated within the radiation sensitive volume of a number of small field detectors for 6 MV linear accelerator beams. The calculated electron spectra will be used to determine electron fluence perturbation as a function of field size and its implication on small field dosimetry analyzed.
Fluence spectra were calculated with the user code PenEasy, based on the PENELOPE Monte Carlo system. The detectors simulated were one liquid ionization chamber, two air ionization chambers, one diamond detector, and six silicon diodes, all manufactured either by PTW or IBA. The spectra were calculated for broad (10 cm × 10 cm) and narrow (0.5 cm × 0.5 cm) photon beams in order to investigate the field size influence on the fluence spectra and its resulting perturbation. The photon fluence spectra were used to analyze the impact of absorption and generation of photons. These will have a direct influence on the electrons generated in the detector radiation sensitive volume. The electron fluence spectra were used to quantify the perturbation effects and their relation to output correction factors.
The photon fluence spectra obtained for all detectors were similar to the spectrum in water except for the shielded silicon diodes. The photon fluence in the latter group was strongly influenced, mostly in the low-energy region, by photoabsorption in the high-Z shielding material. For the ionization chambers and the diamond detector, the electron fluence spectra were found to be similar to that in water, for both field sizes. In contrast, electron spectra in the silicon diodes were much higher than that in water for both field sizes. The estimated perturbations of the fluence spectra for the silicon diodes were 11-21% for the large fields and 14-27% for the small fields. These perturbations are related to the atomic number, density and mean excitation energy (I-value) of silicon, as well as to the influence of the "extracameral"' components surrounding the detector sensitive volume. For most detectors the fluence perturbation was also found to increase when the field size was decreased, in consistency with the increased small-field effects observed for the smallest field sizes.
The present work improves the understanding of small-field effects by relating output correction factors to spectral fluence perturbations in small field detectors. It is shown that the main reasons for the well-known small-field effects in silicon diodes are the high-Z and density of the "extracameral" detector components and the high I-value of silicon relative to that of water and diamond. Compared to these parameters, the density and atomic number of the radiation sensitive volume material play a less significant role.
近期已有多篇文献确定了窄兆伏级光子束相对剂量测定的校正因子。由于通常认为窄束中缺乏横向带电粒子平衡(LCPE)会导致多种小场效应,所以需要这些校正。相对剂量测定的校正因子对于考虑探测器引起的注量扰动最终是必要的。对于大多数小场探测器,这种扰动取决于场大小,当场大小减小时会导致较大的校正因子。在本工作中,将针对6兆伏直线加速器束,在多个小场探测器的辐射灵敏体积内计算电子和光子能量注量微分。计算得到的电子能谱将用于确定作为场大小函数的电子注量扰动,并分析其对小场剂量测定的影响。
基于PENELOPE蒙特卡罗系统,使用用户代码PenEasy计算注量谱。模拟的探测器有一个液体电离室、两个空气电离室、一个金刚石探测器和六个硅二极管,均由PTW或IBA制造。为了研究场大小对注量谱及其产生的扰动的影响,计算了宽(10 cm×10 cm)和窄(0.5 cm×0.5 cm)光子束的谱。光子注量谱用于分析光子吸收和产生的影响。这些将直接影响探测器辐射灵敏体积内产生的电子。电子注量谱用于量化扰动效应及其与输出校正因子的关系。
除了屏蔽硅二极管外,所有探测器获得的光子注量谱与水中的谱相似。后一组中的光子注量在低能区域受到高Z屏蔽材料中光吸收的强烈影响。对于电离室和金刚石探测器,发现两种场大小下的电子注量谱都与水中的相似。相比之下,两种场大小下硅二极管中的电子能谱都远高于水中的。硅二极管注量谱的估计扰动对于大场为11% - 21%,对于小场为14% - 27%。这些扰动与硅的原子序数、密度和平均激发能(I值)以及探测器灵敏体积周围“腔外”部件的影响有关。对于大多数探测器,还发现当场大小减小时注量扰动增加,这与在最小场大小下观察到的小场效应增加一致。
本工作通过将输出校正因子与小场探测器中的谱注量扰动相关联,增进了对小场效应的理解。结果表明,硅二极管中众所周知的小场效应的主要原因是“腔外”探测器部件的高Z和密度以及硅相对于水和金刚石的高I值。与这些参数相比,辐射灵敏体积材料的密度和原子序数起的作用较小。