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HLE16:一种对半导体带隙和分子激发能具有良好性能的局部Kohn-Sham梯度近似。

HLE16: A Local Kohn-Sham Gradient Approximation with Good Performance for Semiconductor Band Gaps and Molecular Excitation Energies.

作者信息

Verma Pragya, Truhlar Donald G

机构信息

Department of Chemistry, Chemical Theory Center, and Minnesota Supercomputing Institute, University of Minnesota , Minneapolis, Minnesota 55455-0431, United States.

出版信息

J Phys Chem Lett. 2017 Jan 19;8(2):380-387. doi: 10.1021/acs.jpclett.6b02757. Epub 2017 Jan 4.

DOI:10.1021/acs.jpclett.6b02757
PMID:28033712
Abstract

Local exchange-correlation functionals have low cost and convenient portability but are known to seriously underestimate semiconductor band gaps and the energies of molecular Rydberg states. Here we present a new local approximation to the exchange-correlation functional called HLE16 that gives good performance for semiconductor band gaps and molecular excitation energies and is competitive with hybrid functionals. By the simultaneous increase of the local exchange and decrease of the local correlation, electronic excitation energies were improved without excessively degrading the ground-state solid-state cohesive energies, molecular bond energies, or chemical reaction barrier heights, although the new functional is not recommended for optimizing lattice constants or molecular bond lengths. The new functional can be useful as-is for calculations on semiconductors or excited states where it is essential to control the cost, and it can also be useful in establishing a starting point for developing even better new functionals that perform well for excited states.

摘要

局域交换关联泛函成本低且便于移植,但众所周知,它会严重低估半导体带隙和分子里德堡态的能量。在此,我们提出一种新的交换关联泛函局部近似,称为HLE16,它在半导体带隙和分子激发能方面表现良好,可与杂化泛函相媲美。通过同时增加局部交换和减少局部关联,电子激发能得到了改善,而不会过度降低基态固态结合能、分子键能或化学反应势垒高度,不过新泛函不建议用于优化晶格常数或分子键长。新泛函在用于控制成本至关重要的半导体或激发态计算时就已经很有用了,它还可用于为开发对激发态表现良好的更好的新泛函建立起点。

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